th50vsf2580 TOSHIBA Semiconductor CORPORATION, th50vsf2580 Datasheet - Page 13

• Manufacturer Part Number: th50vsf2580
• Description: Sram And Flash Memory Mixed Multi-chip Package
• Manufacturer: TOSHIBA Semiconductor CORPORATION

ABSOLUTE MAXIMUM RATINGS
HARDWARE SEQUENCE FLAGS
V
V
V
T
P
T
I
N
T
(1) −2.0 V for pulse width ≤ 20 ns
(2) Output shorted for no more than one second. No more than one output shorted at a time
In Progress
Time Limit
Exceeded
Notes: DQ outputs cell data and
OSHORT
opr
solder
stg
CC
IN
DQ
D
EW
SYMBOL
DQ0 and DQ1 pins are reserved for future use.
0 is output on DQ0, DQ1 and DQ4.
(1) Data output from an address to which Write is being performed are undefined.
(2) Output when the block address selected for Auto Block Erase is specified and data is read from there.
(3) Output when a block address not selected for Auto Block Erase of same bank as selected block is specified and data is
During Auto Chip Erase, all blocks are selected.
read from there.
Auto Programming
Read in Program Suspend
In Auto
Erase
In Erase
Suspend
Auto Programming
Auto Erase
Programming in Erase Suspend
V
Input Voltage
Input/Output Voltage
Operating Temperature
Power Dissipation
Soldering Temperature (10s)
Output Short Circuit Current
Erase/Program Cycling Capability
Storage Temperature
CCs
/V
CCf
STATUS
Erase Hold Time
Auto Erase
Read
Programming
Supply Voltage
(1)
RY
/
BY
PARAMETER
(1)
goes High-Impedence when the operation has been completed.
(2)
Selected
Not-selected
Selected
Not-selected
Selected
Not-selected
Selected
Not-selected
(2)
(3)
DQ
DQ
DQ
DQ
DQ
DQ7
Data
Data
0
0
0
0
1
0
7
7
7
7
7
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ6
Data
Data
1
−0.5~V
TH50VSF2580/2581AASB
Data
Data
DQ5
0
0
0
0
0
0
0
0
1
1
1
−0.3~4.6
−0.3~4.6
−55~125
CC
RANGE
100,000
-40~85
260
100
0.6
+ 0.5 (≤ 4.6)
Data
Data
DQ3
0
0
0
1
1
0
0
0
0
1
0
2001-10-26 13/50
Toggle
Toggle
Toggle
Toggle
DQ2
Data
Data
NA
NA
1
1
1
1
1
Cycles
UNIT
RY
mA
°C
°C
°C
W
V
V
V
Hi-Z
Hi-Z
Hi-Z
0
0
0
0
0
0
0
0
0
0
/
BY