am41dl6408h Meet Spansion Inc., am41dl6408h Datasheet - Page 61

• Manufacturer Part Number: am41dl6408h
• Description: Stacked Multi-chip Package Mcp Flash Memory And Sram 64 Megabit 8 M X 8-bit/4 M X 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 8 Mbit 1 M X 8-bit/512 K X 16-bit Static Ram
• Manufacturer: Meet Spansion Inc.

FLASH ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 ° C, 3.0 V V
2. Under worst case conditions of 90 ° C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 14 for further
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
PACKAGE PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
November 24, 2003
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
Parameter Symbol Parameter Description
CC
assume checkerboard pattern.
maximum program times listed.
information on command definitions. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
Current
C
C
C
C
OUT
IN2
IN3
IN
A
= 25°C, f = 1.0 MHz.
SS
SS
CC
Description
on all pins except I/O pins
on all I/O pins
. Test conditions: V
WP#/ACC Pin Capacitance
Control Pin Capacitance
Word Mode
Byte Mode
Output Capacitance
Input Capacitance
A D V A N C E
CC
= 2.7 V, 1,000,000 cycles.
CC
= 3.0 V, one pin at a time.
Typ (Note 1)
Am41DL6408H
0.4
56
42
28
5
4
7
I N F O R M A T I O N
Max (Note 2)
150
120
210
126
84
5
Test Setup
CC
V
V
V
V
, 1,000,000 cycles. Additionally, programming typicals
OUT
IN
IN
IN
Test Conditions
= 0
= 0
= 0
–100 mA
= 0
–1.0 V
–1.0 V
Min
150°C
125°C
Unit
sec
sec
sec
µs
µs
µs
Fine-pitch
Fine-pitch
Fine-pitch
TSOP
TSOP
TSOP
Excludes 00h programming
BGA
BGA
BGA
Typ
17
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Comments
V
+100 mA
CC
12.5 V
Min
Max
10
20
Max
+ 1.0 V
4.2
8.5
5.4
7.5
3.9
20
6
Years
Years
Unit
Unit
7.5
5.0
6.5
4.7
pF
12
9
59