am41dl6408h Meet Spansion Inc., am41dl6408h Datasheet - Page 39

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am41dl6408h

Manufacturer Part Number
am41dl6408h
Description
Stacked Multi-chip Package Mcp Flash Memory And Sram 64 Megabit 8 M X 8-bit/4 M X 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 8 Mbit 1 M X 8-bit/512 K X 16-bit Static Ram
Manufacturer
Meet Spansion Inc.
Datasheet
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
2. Maximum I
3. I
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
5. Not 100% tested.
November 24, 2003
Parameter
Symbol
CC
V
V
V
I
I
I
I
I
I
I
I
V
V
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CC8
V
V
I
I
I
V
I
I
LIA
OH1
OH2
LIT
LO
LR
LKO
LI
HH
OL
IH
ID
IL
active while Embedded Erase or Embedded Program is in progress.
f
f
f
f
f
f
f
f
CC
current listed is typically less than 2 mA/MHz, with OE# at V
CC
Input Load Current
RESET# Input Load Current
Output Leakage Current
Reset Leakage Current
ACC Input Leakage Current
Flash V
(Notes 1, 2)
Flash V
3)
Flash V
Flash V
Flash V
(Notes 2, 4)
Flash V
Current (Notes 1, 2)
Flash V
Current (Notes 1, 2)
Flash V
Program-While-Erase-Suspended
Current (Notes 2, 5)
Input Low Voltage
Input High Voltage
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Flash Low V
specifications are tested with V
CC
CC
CC
CC
CC
CC
CC
CC
Parameter Description
Current Automatic Sleep Mode
Active Read Current
Active Write Current (Notes 2,
Standby Current (Note 2)
Reset Current (Note 2)
Active Read-While-Program
Active Read-While-Erase
Active
CC
Lock-Out Voltage (Note 5)
A D V A N C E
CC
= V
CC
max.
V
V
V
V
V
V
V
= V
CE#f = V
Byte Mode
CE#f = V
Word Mode
CE#f = V
V
WP#/ACC = V
V
WP#/ACC = V
V
V
CE#f = V
CE#f = V
CE#f = V
I
I
I
OL
OH
OH
OUT
IN
CC
CC
CC
CC
CC
CC
CC
CC
IL
Am41DL6408H
ACC max
= V
= 2.0 mA, V
= V
= –2.0 mA, V
= –100 µA, V
f = V
f = V
f = V
= V
= V
= V
= V
= V
= V
SS
SS
CC max
I N F O R M A T I O N
CC max
CC max
CC max
CC max
CC max
CC max
CC max
SS
IL
IL
IL
IL
IL
IL
± 0.3 V
to V
Test Conditions
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE#f = V
to V
, WP#/ACC
IH
; RESET# = 12.5 V
; RESET# = 12.5 V
, RESET# = V
CC
, CE#f, RESET#,
, V
CC
CC
.
CC
CC
,
f ± 0.3 V
f ± 0.3 V
CC
CC
IH
f = V
,
f = V
= V
= V
IH
IH
IH
IH
IH
IH
,
, WE# = V
,
CC
CC
CC min
CC
s = V
± 0.3 V;
s = V
SS
5 MHz
1 MHz
5 MHz
1 MHz
ACC
Word
Word
± 0.3 V,
Byte
Byte
CC min
CC min
IL
+ 30 ns. Typical sleep mode current is 200 nA.
V
0.85 x
CC
–0.2
11.5
Min
V
2.4
8.5
2.0
CC
–0.4
Typ
0.2
0.2
0.2
10
10
15
21
21
21
21
17
2
2
V
CC
Max
±1.0
±1.0
12.5
0.45
0.8
9.5
2.5
35
35
35
16
16
30
45
45
45
45
35
4
4
5
5
5
+ 0.2
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
37

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