uaa3522hl NXP Semiconductors, uaa3522hl Datasheet - Page 19

• Manufacturer Part Number: uaa3522hl
• Description: Low Power Dual-band Gsm Transceiver With An Image Rejecting Front-end
• Manufacturer: NXP Semiconductors

Philips Semiconductors
4. Value is guaranteed only for the P
5. For a given RF input power, the value is the difference in the power measured at the IF output when the LNA is
6. This value is guaranteed within the temperature range 10 to +70 C.
7. Voltage gain is defined as the differential baseband output voltage (either at pins IA/IB or pins QA/QB) divided by the
8. Value refers to differential voltage at pins RXIIFA and RXIIFB (1 k input impedance).
9. Value includes printed circuit board and balun losses.
10. R
11. Guaranteed at T
12. With specified LC tuned circuit (33 nH, 15 pF) connected as shown in Fig.4.
13. Defined for the typical input power.
14. Oscillator configured as shown in the evaluation board diagram Fig.7.
2000 Aug 15
handbook, full pagewidth
Low power dual-band GSM transceiver
with an image rejecting front-end
switched on and when it is switched off.
differential input voltage at pins RXIIFA and RXIIFB.
REFAGC
= 18 k , 1%.
50
input port
amb
= 30 to +70 C.
BALUN
LOSS
LOW
RXIRFA
RXIRFB
i(LO)
typ.
Fig.3 RF receiver test principle.
RECEIVER
RF
RXOIFA
19
RXOIFB
V CC
Z = 1 k
1 k /50
BALUN
Preliminary specification
output port
UAA3522HL
FCA047
R L
50