np34n055hhe Renesas Electronics Corporation., np34n055hhe Datasheet - Page 6
np34n055hhe
Manufacturer Part Number
np34n055hhe
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.NP34N055HHE.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NP34N055HHE
Manufacturer:
NEC/RENESAS
Quantity:
12 500
PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
6
1.1 0.2
2.3 TYP.
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Gate
Gate
Protection
Diode
EQUIVALENT CIRCUIT
6.5 0.2
5.0 0.2
2.3 TYP.
Source
0.5
Drain
0.2
0.1
Body
Diode
2.3 0.2
0.5
0.5 0.1
Data Sheet D14153EJ3V0DS
0.2
0.1
2)TO-252 (MP-3Z)
2.3 TYP.
1.1 0.2
NP34N055HHE, NP34N055IHE
6.5 0.2
5.0 0.2
2.3 TYP.
0.9 MAX.
0.8 MAX.
2.3 0.2
0.8 TYP.
0.5 0.1