np34n055hhe Renesas Electronics Corporation., np34n055hhe Datasheet - Page 5

• Manufacturer Part Number: np34n055hhe
• Description: Switching N-channel Power Mos Fet Industrial Use
• Manufacturer: Renesas Electronics Corporation.

10000
1000
1000
100
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
100
10
10
1
45
40
35
30
25
20
15
10
0.1
5
0
0.1
Figure16. REVERSE RECOVERY TIME vs.
Pulsed
Figure14. CAPACITANCE vs. DRAIN TO
50
CHANNEL TEMPERATURE
T
V
ch
DS
- Channel Temperature - ˚C
DRAIN CURRENT
- Drain to Source Voltage - V
I
F
0
SOURCE VOLTAGE
- Drain Current - A
1
1
50
V
GS
= 10 V
10
100
10
di/dt = 100 A/ s
V
GS
V
f = 1 MHz
= 0 V
GS
I
D
150
= 0 V
= 17 A
C
C
C
100
oss
rss
iss
100
Data Sheet D14153EJ3V0DS
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
1000
100
100
0.1
10
80
70
60
50
40
30
20
10
10
1
0
1
0.1
0
0
Figure15. SWITCHING CHARACTERISTICS
Pulsed
V
NP34N055HHE, NP34N055IHE
t
t
t
f
d(on)
r
Figure13. SOURCE TO DRAIN DIODE
GS
V
4
SD
= 10 V
- Source to Drain Voltage - V
8
Q
I
D
G
FORWARD VOLTAGE
0.5
- Drain Current - A
1
V
- Gate Charge - nC
12
DD
= 44 V
28 V
11 V
V
16
t
d(off)
DS
V
GS
20
1.0
10
= 0 V
24
I
D
= 34 A
28
V
1.5
GS
100
32
16
14
12
10
8
6
4
2
0
5