np34n055hhe Renesas Electronics Corporation., np34n055hhe Datasheet - Page 4

• Manufacturer Part Number: np34n055hhe
• Description: Switching N-channel Power Mos Fet Industrial Use
• Manufacturer: Renesas Electronics Corporation.

4
0.01
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
0.1
100
0.01
10
10
0.1
Figure8. FORWARD TRANSFER ADMITTANCE vs.
10
1
30
20
0.01
0
1
1
Figure10. DRAIN TO SOURCE ON-STATE
1
V
Pulsed
DS
=10V
V
DRAIN CURRENT
GS
2
T
V
RESISTANCE vs. DRAIN CURRENT
A
- Gate to Source Voltage - V
0.1
GS
= 175˚C
I
I
D
D
150˚C
= 10 V
75˚C
25˚C
55˚C
10
- Drain Current - A
- Drain Current - A
3
1
4
T
A
= 175˚C
100
75˚C
25˚C
55˚C
10
5
Pulsed
Data Sheet D14153EJ3V0DS
1000
100
6
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
200
160
120
4.0
3.0
2.0
1.0
40
35
30
25
20
15
10
80
40
0
5
0
0
0
0
Figure7. DRAIN CURRENT vs.
NP34N055HHE, NP34N055IHE
50
CHANNEL TEMPERATURE
GATE TO SOURCE VOLTAGE
V
V
T
GS
GS
V
ch
DS
=10 V
- Gate to Source Voltage - V
- Channel Temperature - ˚C
5
DRAIN TO SOURCE VOLTAGE
2
- Drain to Source Voltage - V
0
I
D
= 17 A
50
10
4
100
V
I
15
D
6
DS
= 250 A
Pulsed
= V
Pulsed
150
GS
20
8