blf6g22-180p NXP Semiconductors, blf6g22-180p Datasheet - Page 3

• Manufacturer Part Number: blf6g22-180p
• Description: Blf6g22-180p Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G22-180P_1
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 5:
Table 6:
T
Table 7:
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit
The BLF6G22-180P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
IMD3
ACPR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
p
= 25 C per section; unless otherwise specified
= 2
900 mA; P
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
Thermal characteristics
Parameter
thermal resistance
from junction to case
Characteristics
Application information
DS
L
= 180 W (CW); f = 2170 MHz.
= 28 V; I
Rev. 01 — 2 March 2006
1
= 2112.5 MHz; f
Dq
= 2
Conditions
T
P
case
L
=
900 mA; T
<tbd>
= 80 C;
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
D
2
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 5 A
= 2122.5 MHz; f
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 8.5 V; V
= V
= 0 V; V
Conditions
P
P
P
P
GS(th)
GS(th)
case
L(AV)
L(AV)
L(AV)
L(AV)
D
= 25 C; unless otherwise specified; in a
DS
DS
D
D
D
= 45 W
= 45 W
= 45 W
= 45 W
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 144 mA
= 950 mA
= 7.2 A
= 28 V
= 28 V;
Min
<tbd>
= 0 V
3
= 2157.5 MHz; f
BLF6G22-180P
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Typ
<tbd>
Min
65
<tbd>
<tbd>
-
-
-
-
-
-
Min
-
<tbd>
<tbd>
-
-
DS
= 28 V;
Typ
-
1.6
2
-
26
-
13
0.1
<tbd>
Typ
45
16.5 -
28
4
37
40
Max
<tbd>
= 2167.5 MHz;
Max
-
-
<tbd>
<tbd>
Max
-
<tbd>
<tbd>
5
-
450
-
<tbd>
-
Unit
K/W
Unit
W
dB
%
dBc
dBc
Unit
V
V
V
A
nA
S
pF
3 of 8
A