blf6g22-180p NXP Semiconductors, blf6g22-180p Datasheet - Page 2

• Manufacturer Part Number: blf6g22-180p
• Description: Blf6g22-180p Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G22-180P_1
Objective data sheet
1.3 Applications
Table 2:
[1]
Table 3:
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
Type number
BLF6G22-180P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range.
Connected to flange
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
-
Rev. 01 — 2 March 2006
Description
flanged balanced LDMOST ceramic package; 2
mounting holes; 4 leads
Conditions
[1]
Simplified outline
1
3
BLF6G22-180P
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2
4
5
Symbol
<tbd>
Min
-
-
-
0.5
65
Max
65
+13
<tbd>
+150
225
Version
SOT539A
Unit
V
V
A
2 of 8
C
C