hy27ug164g2m Hynix Semiconductor, hy27ug164g2m Datasheet - Page 2

• Manufacturer Part Number: hy27ug164g2m
• Description: 4gbit 512mx8bit / 256mx16bit Nand Flash
• Manufacturer: Hynix Semiconductor

Revision History
Rev 0.7 / Feb. 2006
Revision
No.
0.4
0.5
0.6
7) Correct PKG dimension (TSOP PKG)
8) Delete the 1.8V device’s features.
9) Change DC Characteristics (Table 8)
- Operating Current
10) Change AC Characteristics
- Errata is deleted.
- tR is changed.
1) Delete Concurrent Operation.
1) Change DC Characteristics (Table 8)
2) Delete Preliminary.
Before
Before
Before
After
After
After
Before
Before
After
After
Typ
20
25
Typ
25
20
0.050
0.100
60ns
50ns
tWC
I
25us
30us
CP
CC1
I
tR
CC1
Max
40
45
Max
45
40
Typ
20
25
Typ
25
20
35ns
25ns
tWP
I
CC2
I
CC2
Max
History
40
45
Max
45
40
4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
Typ
20
25
Typ
25
20
20ns
15ns
tWH
I
CC3
I
CC3
Max
40
45
Max
45
40
HY27UG(08/16)4G(2/D)M Series
Sep. 16. 2005
Dec. 09. 2005
Oct. 05. 2005
Draft Date
-Continued-
Preliminary
Preliminary
Remark
2