m52s64322a Elite Semiconductor Memory Technology Inc., m52s64322a Datasheet - Page 6
m52s64322a
Manufacturer Part Number
m52s64322a
Description
512k X 32 Bit X 4 Banks Mobile Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
1.M52S64322A.pdf
(47 pages)
- Current page: 6 of 47
- Download datasheet (2Mb)
AC CHARACTERISTICS
Note: 1. Parameters depend on programmed CAS latency.
Elite Semiconductor Memory Technology Inc.
CLK to valid
output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in
Hi-Z
CLK cycle time
2. If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1] ns should be added to
the parameter.
Parameter
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
t
SAC
t
SHZ
SLZ
CC
OH
CH
CL
SS
SH
Min
7.5
2.5
2.5
2.5
9
2
1
1
-7.5
*All AC parameters are measured from half to half.
1000
Max
6
8
6
8
Min
2.5
2.5
10
15
3
3
1
1
Publication Date: Aug. 2009
Revision: 1.3
-10
1000
Max
13.5
13.5
9
9
M52S64322A
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
6/47
Note
1
1
2
3
3
3
3
2
-
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