m52s64322a Elite Semiconductor Memory Technology Inc., m52s64322a Datasheet - Page 35
m52s64322a
Manufacturer Part Number
m52s64322a
Description
512k X 32 Bit X 4 Banks Mobile Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
1.M52S64322A.pdf
(47 pages)
- Current page: 35 of 47
- Download datasheet (2Mb)
Page Write Cycle at Different Bank @ Burst Length = 4
*Note:
Elite Semiconductor Memory Technology Inc.
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.
Publication Date: Aug. 2009
Revision: 1.3
M52S64322A
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