m52s128168a Elite Semiconductor Memory Technology Inc., m52s128168a Datasheet - Page 39

• Manufacturer Part Number: m52s128168a
• Description: 2m X 16 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
*Note : 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Elite Semiconductor Memory Technology Inc.
2. Burst stop is valid at every burst length.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
Publication Date: Dec. 2008
Revision: 1.2
M52S128168A
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