m52s128168a Elite Semiconductor Memory Technology Inc., m52s128168a Datasheet - Page 34

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m52s128168a

Manufacturer Part Number
m52s128168a
Description
2m X 16 Bit X 4 Banks Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
ESMT
M52S128168A
Page Read Cycle at Different Bank @ Burst Length = 4
Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
Publication Date: Dec. 2008
Elite Semiconductor Memory Technology Inc.
Revision: 1.2
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