m52s128168a Elite Semiconductor Memory Technology Inc., m52s128168a Datasheet - Page 35

• Manufacturer Part Number: m52s128168a
• Description: 2m X 16 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
M52S128168A
Page Write Cycle at Different Bank @ Burst Length = 4
*Note : 1. To interrupt burst write by Row precharge , DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge , both the write and the precharge banks must be the same.
Publication Date: Dec. 2008
Elite Semiconductor Memory Technology Inc.
Revision: 1.2
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