sia921edj Vishay, sia921edj Datasheet - Page 5

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sia921edj

Manufacturer Part Number
sia921edj
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
sia921edj-T1-E3
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sia921edj-T1-GE3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64734
S09-0317-Rev. A, 02-Mar-09
12
10
8
6
4
2
0
0
25
D
T
Package Limited
C
is based on T
50
Current Derating*
- Case Temperature (°C)
75
J(max)
100
0.01
100
0.1
10
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
1
0.1
125
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
A
GS
Limited by R
= 25 °C
> minimum V
V
150
DS
- Drain-to-Source Voltage (V)
1
DS(on)
GS
BVDSS Limited
*
at which R
DS(on)
10
8
6
4
2
0
is specified
25
100 µs
10 ms
1 ms
100 ms
1 s, 10 s
DC
100
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiA921EDJ
www.vishay.com
125
150
5

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