sia921edj Vishay, sia921edj Datasheet - Page 4

• Manufacturer Part Number: sia921edj
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
10
10
8
6
4
2
0
1
- 50
0.0
0
I
D
- 25
Source-Drain Diode Forward Voltage
= 4.6 A
0.2
3
V
SD
0
Q
V
g
- Source-to-Drain Voltage (V)
DS
Threshold Voltage
T
- Total Gate Charge (nC)
0.4
J
= 10 V
25
- Temperature (°C)
T
Gate Charge
6
J
= 150 °C
50
0.6
9
75
V
0.8
DS
100
= 16 V
I
D
T
12
J
= 250 µA
= 25 °C
1.0
125
150
15
1.2
0.20
0.15
0.10
0.05
0.00
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
15
20
10
0.001
5
0
- 50
0
I
D
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
= 1 A; T
Single Pulse Power, Junction-to-Ambient
- 25
I
I
D
D
0.01
= 3.6 A
= 1 A; T
1
J
V
= 125 °C
GS
0
T
J
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
0.1
= 25 °C
25
2
Pulse (s)
50
I
D
1
S09-0317-Rev. A, 02-Mar-09
= 3.6 A; T
Document Number: 64734
V
I
D
3
GS
75
= 3.6 A; T
= 4.5 V
10
100
J
V
= 25 °C
GS
4
J
= 2.5 V
= 125 °C
100
125
150
5
1000