sia921edj Vishay, sia921edj Datasheet - Page 3

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sia921edj

Manufacturer Part Number
sia921edj
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
sia921edj-T1-E3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64734
S09-0317-Rev. A, 02-Mar-09
0.20
0.15
0.10
0.05
0.00
0.5
0.4
0.3
0.2
0.1
0.0
15
12
9
6
3
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
Gate Current vs. Gate-to-Source Voltage
0.5
3
3
V
V
DS
GS
Output Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
V
1.0
GS
I
6
D
- Drain Current (A)
= 2.5 V
6
V
GS
1.5
9
V
= 10 V thru 3 V
GS
I
GSS
9
= 4.5 V
2.0
12
at 25 °C (mA)
V
V
V
GS
GS
GS
12
2.5
15
= 1.5 V
= 2.5 V
= 2 V
3.0
15
18
10
1000
10
10
10
10
10
10
10
10
800
600
400
200
-10
-2
-3
-4
-5
-6
-7
-8
-9
5
4
3
2
1
0
0
0.0
0
0
C
Gate Current vs. Gate-to-Source Voltage
rss
3
4
V
V
V
0.5
GS
Transfer Characteristics
DS
GS
C
oss
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
iss
6
T
C
Capacitance
= 125 °C
8
T
I
C
GSS
1.0
= 25 °C
9
Vishay Siliconix
at 150 °C
12
SiA921EDJ
1 2
I
GSS
1.5
T
www.vishay.com
at 25 °C
C
16
= - 55 °C
1 5
2.0
20
1 8
3

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