si7991dp-t1 Vishay, si7991dp-t1 Datasheet - Page 4

• Manufacturer Part Number: si7991dp-t1
• Description: Dual P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7991DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
ï0.2
ï0.4
0.8
0.6
0.4
0.2
0.0
0.01
0.1
ï50
2
1
10
ï4
ï25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
ï Temperature (_C)
25
10
ï3
I
D
50
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10
100
1
0.1
ï2
r
Limited
DS(on)
125
I
D(on)
Single Pulse
T
Square Wave Pulse Duration (sec)
A
Limited
V
150
= 25_C
DS
New Product
ï Drain-to-Source Voltage (V)
Safe Operating Area
10
1
ï1
BV
DSS
Limited
10
1
I
DM
30
24
18
12
6
0
Limited
0.001
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
0.1
ï T
t
A
Time (sec)
1
= P
t
2
DM
1
Z
thJA
thJA
100
t
t
S-32127—Rev. B, 27-Oct-03
1
2
(t)
Document Number: 72515
= 60_C/W
10
100
600
1000