si7991dp-t1 Vishay, si7991dp-t1 Datasheet

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si7991dp-t1

Manufacturer Part Number
si7991dp-t1
Description
Dual P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes
a.
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
ï30
ï30
(V)
J
8
D1
6.15 mm
ti
7
D1
t A bi
6
D2
PowerPAK SO-8
Bottom View
0.035 @ V
0.023 @ V
5
J
J
a
a
= 150_C)
= 150_C)
t
D2
a
a
r
Parameter
Parameter
DS(on)
Dual P-Channel 30-V (D-S) MOSFET
1
GS
GS
a
a
S1
= ï4.5 V
= ï10 V
(W)
2
G1
a
Ordering Information: Si7991DP-T1
3
S2
5.15 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
ï10.2
ï8.1
= 25_C
= 70_C
= 25_C
= 70_C
(A)
G
Symbol
Symbol
1
T
R
R
R
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
APPLICATIONS
D Load Switch
D Battery Switch
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
P-Channel MOSFET
GS
DS
D
D
S
D
D
with Low 1.07-mm Profile
stg
ï Notebook PCs
ï Desktop PCs
ï Game Stations
D
S
1
1
10 secs
Typical
ï10.2
ï8.2
ï2.9
3.5
2.2
28
60
3
ï55 to 150
"20
G
ï30
ï30
2
Steady State
P-Channel MOSFET
Maximum
Vishay Siliconix
ï6.6
ï5.3
ï1.2
1.4
0.9
3.7
35
85
S
D
2
2
Si7991DP
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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si7991dp-t1 Summary of contents

Page 1

... D New Low Thermal Resistance PowerPAKr Package I (A) D with Low 1.07-mm Profile ï10.2 APPLICATIONS ï8.1 D Load Switch ï Notebook PCs ï Desktop PCs ï Game Stations D Battery Switch 5. Ordering Information: Si7991DP-T1 P-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C A I ...

Page 2

... Si7991DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72515 S-32127—Rev. B, 27-Oct-03 New Product 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si7991DP Vishay Siliconix Capacitance C iss C oss 500 C rss ï Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si7991DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 ï0.2 ï0 ï50 ï25 T ï Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï www.vishay.com 4 New Product 100 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 ï4 10 Document Number: 72515 S-32127—Rev. B, 27-Oct-03 New Product ï3 ï Square Wave Pulse Duration (sec) Si7991DP Vishay Siliconix ï www.vishay.com 5 ...

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