si7991dp-t1 Vishay, si7991dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7991dp-t1
• Description: Dual P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72515
S-32127—Rev. B, 27-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
5
= 10 A
0.2
On-Resistance vs. Drain Current
= 15 V
6
V
SD
10
Q
g
ï Source-to-Drain Voltage (V)
I
0.4
ï Total Gate Charge (nC)
D
15
ï Drain Current (A)
T
V
Gate Charge
12
J
GS
= 150_C
= 4.5 V
0.6
20
18
25
0.8
V
GS
30
T
= 10 V
24
J
= 25_C
1.0
35
1.2
30
40
New Product
3000
2500
2000
1500
1000
0.10
0.08
0.06
0.04
0.02
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
ï50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
C
D
V
I
ï25
D
rss
GS
= 5 A
= 10 A
= 10 V
2
6
T
V
V
0
C
J
GS
DS
ï Junction Temperature (_C)
oss
ï Gate-to-Source Voltage (V)
ï Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
= 10 A
C
Vishay Siliconix
iss
50
18
6
75
Si7991DP
100
24
www.vishay.com
8
125
150
10
30
3