2n7002ka NXP Semiconductors, 2n7002ka Datasheet - Page 7

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2n7002ka

Manufacturer Part Number
2n7002ka
Description
2n7002ka N-channel Trenchmos Fet
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
2N7002KA_2
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Source current as a function of source-drain
V
GS(th)
(V)
(A)
I
S
0.8
0.6
0.4
0.2
3
2
1
0
1
0
-60
I
junction temperature
T
voltage; typical values
D
0.2
j
= 1 mA; V
= 25 C and 150 C; V
0.4
0
DS
= V
150 C
GS
max
typ
min
60
0.6
GS
= 0 V
120
0.8
T
j
003aab101
= 25 C
003aab356
V
T
SD
j
( C)
(V)
Rev. 02 — 25 September 2007
180
1
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(pF)
(A)
C
10
10
10
10
I
10
D
10
-3
-4
-5
-6
1
2
10
T
gate-source voltage
V
as a function of drain-source voltage; typical
values
0
j
GS
= 25 C; V
1
= 0 V; f = 1 MHz
DS
1
= 5 V
1
min
N-channel TrenchMOS FET
10
2
2N7002KA
typ
V
V
© NXP B.V. 2007. All rights reserved.
DS
GS
003aab100
003aac035
max
(V)
(V)
C
C
C
oss
rss
iss
10
3
2
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