2sc3689 Sanyo Semiconductor Corporation, 2sc3689 Datasheet - Page 2

• Manufacturer Part Number: 2sc3689
• Description: Npn Epitaxial Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7013A-009
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
100
80
60
40
20
0
0
1
Parameter
0.95
Collector-to-Emitter Voltage, V CE -- V
0.2
2.9
3
2
0.4
0.4
I C -- V CE
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.1
0.6
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE (sat)
V BE (sat)
Symbol
I CBO
I EBO
h FE
Cob
f T
I B =0 µ A
0.8
ITR05836
V CB =40V, I E =0A
V EB =10V, I C =0A
V CE =5V, I C =10mA
V CE =10V, I C =10mA
V CB =10V, f=1MHz
I C =50mA, I B =1mA
I C =50mA, I B =1mA
I C =10µA, I E =0A
I C =1mA, R BE =∞
I E =10µA, I C =0A
1.0
2SC3689
Conditions
20
16
12
8
4
0
0
Collector-to-Emitter Voltage, V CE -- V
10
min
800
20
I C -- V CE
60
50
15
Ratings
typ
1500
200
30
1.5
0.1
0.8
max
I B =0 µ A
3200
40
0.1
0.1
0.5
1.1
No.1855-2/4
ITR05837
Unit
MHz
µA
µA
pF
V
V
V
V
V
50