Ordering number : EN1855B
2SC3689
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
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Low-frequency general-purpose amplifiers, drivers, muting circuit.
Small Cob (Cob=1.5pF).
Ultrasmall-sized package permitting 2SC3689-used sets to be made smaller, slimmer.
Adoption of MBIT process.
High DC current gain (h FE =800 to 3200).
Low collector-to-emitter saturation voltage (V CE (sat)
High V EBO (V EBO ≥15V).
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Transistor
High-h FE, Low-Frequency
General-Purpose Amplifier Applications
Symbol
V CBO
V CEO
V EBO
Tstg
I CP
P C
I C
Tj
D1907LA TI IM TC-00001108 / 61704TN(PC)/N3098HA(KT)/4237AT/N195KI,TS
SANYO Semiconductors
2SC3689
≤0.5V
Conditions
).
DATA SHEET
Ratings
--55 to +150
100
200
200
150
60
50
15
No.1855-1/4
Unit
mA
mA
°C
°C
W
V
V
V