bc847bpdxv6 ON Semiconductor, bc847bpdxv6 Datasheet - Page 3

• Manufacturer Part Number: bc847bpdxv6
• Description: General Purpose Dual Transistor
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS (PNP)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Noise Figure
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
f = 1.0 kHz, BW = 200 Hz)
C
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
= −1.0 mA)
= −10 mA)
= −10 μA, V
= −10 mA)
= −10 μA, V
= −2.0 mA, V
= −10 mA, I
= −100 mA, I
= −10 mA, I
= −100 mA, I
= −2.0 mA, V
= −10 mA, V
= −10 mA, V
= −0.2 mA, V
= −10 V, f = 1.0 MHz)
B
B
EB
CE
CE
CE
B
B
CE
CE
CE
= −0.5 mA)
= −0.5 mA)
= −5.0 mA)
= −5.0 mA)
= 0)
= −5.0 V)
= −5.0 V)
= −5.0 Vdc, f = 100 MHz)
= −5.0 V)
= −5.0 V)
= −5.0 Vdc, R
(V
CB
CB
= −30 V)
= −30 V, T
Characteristic
S
= 2.0 kΩ,
BC847BPDXV6T1, BC847BPDXV6T5
A
= 150°C)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
3
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
(BR)CES
CE(sat)
I
BE(sat)
BE(on)
CBO
h
C
NF
f
FE
T
ob
−5.0
−0.6
Min
−45
−50
−50
200
100
−
−
−
−
−
−
−
−
−
−
−0.7
−0.9
Typ
150
290
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.65
−0.75
−0.82
Max
−4.0
−0.3
−15
475
4.5
10
−
−
−
−
−
−
−
−
MHz
Unit
μA
nA
pF
dB
V
V
V
V
V
V
V
−