bc847bpdxv6 ON Semiconductor, bc847bpdxv6 Datasheet - Page 2

• Manufacturer Part Number: bc847bpdxv6
• Description: General Purpose Dual Transistor
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS (NPN)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Noise Figure
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
E
C
C
C
C
= 1.0 mA)
= 10 mA)
= 10 μA, V
= 10 mA)
= 10 μA, V
= 2.0 mA, V
= 10 mA, V
= 0.2 mA, V
EB
CE
CE
CE
CE
= 0)
= 5.0 V)
= 5.0 Vdc, f = 100 MHz)
= 5.0 V)
= 5.0 Vdc, R
(I
CB
(V
C
C
CB
= 10 V, f = 1.0 MHz)
= 2.0 mA, V
= 10 mA, V
CB
= 30 V, T
= 30 V)
Characteristic
S
(I
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
C
C
= 10 mA, I
= 100 mA, I
(I
CE
CE
A
C
C
BC847BPDXV6T1, BC847BPDXV6T5
= 150°C)
= 5.0 V)
= 10 mA, I
= 100 mA, I
= 5.0 V)
B
(T
B
= 0.5 mA)
A
= 5.0 mA)
B
= 25°C unless otherwise noted)
B
= 0.5 mA)
= 5.0 mA)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
C
I
BE(sat)
BE(on)
CBO
h
NF
f
obo
FE
T
Min
200
580
100
6.0
45
50
50
−
−
−
−
−
−
−
−
−
−
Typ
150
290
660
0.7
0.9
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
475
700
770
5.0
0.6
4.5
15
10
−
−
−
−
−
−
−
−
MHz
Unit
mV
nA
μA
dB
pF
V
V
V
V
V
V
−