2sc5945 Renesas Electronics Corporation., 2sc5945 Datasheet - Page 4

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2sc5945

Manufacturer Part Number
2sc5945
Description
Transistors Si Npn Epitaxial High Frequency Medium Power Amplifier High Frequency Medium Power Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC5945
Pin-Pout Characteristics
Rev.3.00 Aug 03, 2006 page 4 of 35
30
25
20
15
10
20
15
10
V
Output Power, Power Added Efficiency
5
5
0
BB
0
0
: Bias Adjustment
V cc = 3.3 V
f = 2.4 GHz
I cq = 100 mA
V cc = 3.3 V
f = 2.4 GHz
I cq = 100 mA
Power Gain vs. Input Power
Input Power P in (dBm)
Input Power P in (dBm)
5
5
IN
vs. Input Power
10
10
* 1 µF
100 pF // 15 pF
P out
15
15
0.75 pF
+
-
0.22 nF 1000 pF
20
20
15 pF
PAE
25
25
1.0 nH
30
30
100
80
60
40
20
0
0.5 pF
10 nH
22 Ω
1000 pF 0.22 nF
4.7 nH
1 pF
30
25
20
15
10
20
15
10
5
5
0
Output Power, Power Added Efficiency
0
0
V cc = 3.3 V
V cc = 3.3 V
f = 2.4 GHz
I cq = 250 mA
f = 2.4 GHz
I cq = 250 mA
100 pF // 15 pF
22 nH 0.75 pF
Power Gain vs. Input Power
5
Input Power P in (dBm)
5
Input Power P in (dBm)
+
-
vs. Input Power
* 1 µF
10
10
P out
15
15
V
20
20
CC
OUT
PAE
= +3.3 V
25
25
30
30
100
80
60
40
20
0

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