2sc5945 Renesas Electronics Corporation., 2sc5945 Datasheet

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2sc5945

Manufacturer Part Number
2sc5945
Description
Transistors Si Npn Epitaxial High Frequency Medium Power Amplifier High Frequency Medium Power Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC5945
Si NPN Epitaxial
High Frequency Medium Power Amplifier
Features
Outline
Note:
Absolute Maximum Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Value on PCB (40 x 40 x 1.0 mm)
Rev.3.00 Aug 03, 2006 page 1 of 35
Excellent Linearity
P1dB at output = +26 dBm typ. f = 2.4 GHz
High Collector to Emitter Voltage
V
Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm).
CEO
Marking is “5945”.
= 5 V
RENESAS Package code: PWSN0006JA-A
(Package name: HWSON-6 <TNP-6DTV>)
Item
6
5
4
1
2
7
3
Symbol
V
V
V
Tstg
Pc
CBO
CEO
Tj
EBO
I
C
6
5
4
1
–55 to +150
2
Ratings
7
3
500
150
1.5
13
5
1
Note
1. Collector
2. Collector
3. Collector
4. Emitter
5. Base
6. Emitter
7. Emitter
REJ03G0443-0300
Unit
mA
Aug 03, 2006
W
V
V
V
C
C
(Ta = 25°C)
Rev.3.00

Related parts for 2sc5945

2sc5945 Summary of contents

Page 1

... Si NPN Epitaxial High Frequency Medium Power Amplifier Features Excellent Linearity P1dB at output = +26 dBm typ 2.4 GHz High Collector to Emitter Voltage CEO Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm). ...

Page 2

... Electrical Characteristics Item DC current transfer ratio Reverse Transfer Capacitance Transition Frequency Maximum Available Gain Power Gain Power Added Efficiency 1dB Compression Point at output 1dB Compression Point at output Main Characteristics Collector Power Dissipation Curve 1.5 1.0 0 100 Ambient Temperature T Rev.3.00 Aug 03, 2006 page ...

Page 3

... Typical Transfer Characteristics 500 400 300 200 100 0 0.2 0.4 Base to Emitter Voltage V Reverse Transfer Capacitance vs. Collector to Base Voltage 1.5 1.0 0 Collector to Base Voltage V Maximum Available Gain, Maximum Stable Gain vs. Collector Current MAG 25 MSG Collector Current I Rev ...

Page 4

... Pin-Pout Characteristics + * 1 µF - 0.22 nF 1000 Bias Adjustment BB 100 0.75 pF Output Power, Power Added Efficiency vs. Input Power 3 out f = 2.4 GHz 100 Input Power P in (dBm) Power Gain vs. Input Power 3 2.4 GHz 100 mA ...

Page 5

... S Parameter vs. Frequency -.2 -.4 -.6 -.8 -1 Condition 400 to 3000 MHz (100 MHz Step 100 mA 250 mA Parameter vs. Frequency 12 90° 120° 150° 180° -150° -120° -90° Condition ...

Page 6

... S Parameter vs. Frequency -.2 -.4 -.6 -.8 -1 Condition 3 400 to 3000 MHz (100 MHz Step 100 mA 250 mA Parameter vs. Frequency 12 90° 120° 150° 180° -150° -120° -90° Condition 3 ...

Page 7

... S Parameter vs. Frequency -.2 -.4 -.6 -.8 -1 Condition 3 400 to 3000 MHz (100 MHz Step 100 mA 250 mA Parameter vs. Frequency 12 90° 120° 150° 180° -150° -120° -90° Condition 3 ...

Page 8

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.748 -149.1 500 0.751 -158.6 600 0.755 -165.6 700 0.758 -170.8 800 0.760 -175.2 900 0.762 -178.9 1000 0.765 177.8 1100 0.768 174.9 1200 0.770 172.1 1300 0.771 169.7 1400 0.772 167.2 1500 ...

Page 9

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.750 -165.7 500 0.754 -171.7 600 0.758 -176.3 700 0.761 180.0 800 0.762 176.7 900 0.763 173.8 1000 0.766 171.2 1100 0.768 168.8 1200 0.768 166.5 1300 0.769 164.4 1400 0.769 162.2 1500 ...

Page 10

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.755 -172.0 500 0.759 -176.8 600 0.763 179.5 700 0.764 176.3 800 0.766 173.4 900 0.766 170.8 1000 0.768 168.4 1100 0.770 166.3 1200 0.770 164.2 1300 0.770 162.2 1400 0.770 160.2 1500 ...

Page 11

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.762 -177.4 500 0.765 178.9 600 0.768 175.9 700 0.770 173.1 800 0.770 170.6 900 0.770 168.3 1000 0.772 166.1 1100 0.773 164.1 1200 0.773 162.2 1300 0.772 160.3 1400 0.772 158.4 1500 ...

Page 12

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.767 -179.7 500 0.769 177.0 600 0.772 174.3 700 0.773 171.7 800 0.773 169.3 900 0.773 167.1 1000 0.774 165.0 1100 0.775 163.1 1200 0.775 161.3 1300 0.774 159.4 1400 0.774 157.6 1500 ...

Page 13

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.771 178.5 500 0.773 175.5 600 0.775 173.0 700 0.776 170.6 800 0.776 168.3 900 0.776 166.2 1000 0.776 164.2 1100 0.777 162.4 1200 0.777 160.6 1300 0.776 158.8 1400 0.776 156.9 1500 ...

Page 14

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.776 177.0 500 0.777 174.3 600 0.780 172.0 700 0.780 169.7 800 0.780 167.5 900 0.779 165.5 1000 0.780 163.5 1100 0.781 161.8 1200 0.781 160.0 1300 0.780 158.2 1400 0.779 156.4 1500 ...

Page 15

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.781 176.2 500 0.782 173.7 600 0.784 171.4 700 0.785 169.3 800 0.785 167.1 900 0.784 165.1 1000 0.785 163.2 1100 0.786 161.4 1200 0.785 159.7 1300 0.784 157.9 1400 0.784 156.1 1500 ...

Page 16

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.752 -169.6 500 0.757 -174.8 600 0.761 -178.8 700 0.763 177.8 800 0.764 174.7 900 0.765 172.0 1000 0.767 169.5 1100 0.768 167.3 1200 0.769 165.2 1300 0.769 163.1 1400 0.770 161.0 1500 ...

Page 17

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.748 -148.7 500 0.751 -158.3 600 0.755 -165.3 700 0.757 -170.6 800 0.760 -175.0 900 0.761 -178.7 1000 0.764 178.0 1100 0.767 175.0 1200 0.769 172.3 1300 0.770 169.8 1400 0.771 167.3 1500 ...

Page 18

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.748 -165.5 500 0.752 -171.6 600 0.757 -176.1 700 0.759 -179.9 800 0.761 176.8 900 0.762 173.9 1000 0.764 171.2 1100 0.766 168.9 1200 0.767 166.6 1300 0.767 164.5 1400 0.768 162.3 1500 ...

Page 19

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.753 -171.8 500 0.757 -176.5 600 0.761 179.7 700 0.763 176.4 800 0.764 173.6 900 0.765 170.9 1000 0.766 168.5 1100 0.768 166.4 1200 0.768 164.3 1300 0.768 162.3 1400 0.768 160.3 1500 ...

Page 20

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.760 -177.2 500 0.763 179.1 600 0.766 176.0 700 0.767 173.3 800 0.768 170.7 900 0.768 168.3 1000 0.770 166.2 1100 0.771 164.2 1200 0.771 162.3 1300 0.770 160.4 1400 0.770 158.4 1500 ...

Page 21

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.764 -179.6 500 0.767 177.1 600 0.769 174.4 700 0.770 171.8 800 0.771 169.4 900 0.771 167.2 1000 0.772 165.1 1100 0.773 163.2 1200 0.773 161.3 1300 0.772 159.5 1400 0.772 157.6 1500 ...

Page 22

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.768 178.6 500 0.770 175.7 600 0.773 173.1 700 0.773 170.7 800 0.773 168.4 900 0.774 166.3 1000 0.774 164.2 1100 0.775 162.4 1200 0.775 160.6 1300 0.774 158.8 1400 0.774 156.9 1500 ...

Page 23

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.773 177.1 500 0.775 174.4 600 0.777 172.1 700 0.778 169.8 800 0.777 167.6 900 0.777 165.5 1000 0.778 163.6 1100 0.779 161.8 1200 0.779 160.0 1300 0.777 158.3 1400 0.777 156.4 1500 ...

Page 24

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.778 176.3 500 0.780 173.8 600 0.782 171.5 700 0.782 169.3 800 0.782 167.2 900 0.782 165.1 1000 0.782 163.2 1100 0.783 161.5 1200 0.783 159.7 1300 0.782 158.0 1400 0.781 156.1 1500 ...

Page 25

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.750 -169.3 500 0.755 -174.5 600 0.759 -178.6 700 0.761 177.9 800 0.762 174.9 900 0.763 172.1 1000 0.765 169.6 1100 0.767 167.4 1200 0.767 165.3 1300 0.768 163.2 1400 0.768 161.1 1500 ...

Page 26

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.747 -147.9 500 0.750 -157.7 600 0.754 -164.9 700 0.756 -170.2 800 0.759 -174.7 900 0.761 -178.4 1000 0.764 178.2 1100 0.766 175.2 1200 0.768 172.5 1300 0.769 170.0 1400 0.770 167.5 1500 ...

Page 27

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.746 -165.2 500 0.751 -171.3 600 0.755 -175.9 700 0.758 -179.7 800 0.759 177.0 900 0.760 174.0 1000 0.763 171.4 1100 0.764 169.0 1200 0.765 166.7 1300 0.766 164.6 1400 0.766 162.4 1500 ...

Page 28

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.751 -171.6 500 0.755 -176.4 600 0.759 179.8 700 0.761 176.6 800 0.762 173.7 900 0.763 171.0 1000 0.765 168.6 1100 0.766 166.5 1200 0.767 164.4 1300 0.767 162.4 1400 0.767 160.3 1500 ...

Page 29

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.758 -177.0 500 0.761 179.2 600 0.764 176.1 700 0.766 173.4 800 0.766 170.8 900 0.766 168.4 1000 0.768 166.3 1100 0.769 164.3 1200 0.769 162.3 1300 0.769 160.5 1400 0.768 158.5 1500 ...

Page 30

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.762 -179.4 500 0.765 177.3 600 0.767 174.5 700 0.768 171.9 800 0.769 169.5 900 0.769 167.2 1000 0.770 165.2 1100 0.771 163.3 1200 0.771 161.4 1300 0.770 159.6 1400 0.770 157.7 1500 ...

Page 31

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.766 178.7 500 0.768 175.8 600 0.770 173.2 700 0.771 170.8 800 0.772 168.5 900 0.772 166.3 1000 0.772 164.3 1100 0.773 162.5 1200 0.773 160.7 1300 0.772 158.9 1400 0.772 157.0 1500 ...

Page 32

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.770 177.2 500 0.773 174.5 600 0.775 172.2 700 0.776 169.9 800 0.776 167.7 900 0.775 165.6 1000 0.776 163.6 1100 0.777 161.9 1200 0.777 160.1 1300 0.776 158.3 1400 0.775 156.4 1500 ...

Page 33

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.776 176.4 500 0.777 173.9 600 0.780 171.6 700 0.780 169.4 800 0.780 167.2 900 0.780 165.2 1000 0.780 163.3 1100 0.781 161.5 1200 0.781 159.8 1300 0.780 158.0 1400 0.779 156.2 1500 ...

Page 34

... S parameter S11 f (MHz) MAG ANG (deg.) 400 0.749 -169.0 500 0.753 -174.3 600 0.757 -178.4 700 0.759 178.1 800 0.761 175.0 900 0.762 172.3 1000 0.763 169.7 1100 0.765 167.5 1200 0.766 165.4 1300 0.766 163.3 1400 0.766 161.2 1500 ...

Page 35

... S S Ordering Information Part Name 2SC5945TR-E Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.3.00 Aug 03, 2006 page Previous Code MASS[Typ ...

Page 36

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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