2sc5945 Renesas Electronics Corporation., 2sc5945 Datasheet - Page 3

• Manufacturer Part Number: 2sc5945
• Description: Transistors Si Npn Epitaxial High Frequency Medium Power Amplifier High Frequency Medium Power Amplifier
• Manufacturer: Renesas Electronics Corporation.

2SC5945
Rev.3.00 Aug 03, 2006 page 3 of 35
Maximum Available Gain, Maximum Stable Gain
500
400
300
200
100
1.5
1.0
0.5
30
25
20
15
10
0
5
0
0
1
Reverse Transfer Capacitance vs.
Base to Emitter Voltage V
V
Typical Transfer Characteristics
V
Collector to Base Voltage V
CE
CE
Collector Current I
Collector to Base Voltage
= 3 V
0.2
= 3 V
MAG
MSG
1
vs. Collector Current
10
0.4
2
0.6
3
100
I
f = 1 MHz
E
f = 0.5 GHz
C
= 0
(mA)
1.0 GHz
2.4 GHz
1.8 GHz
0.8
4
BE
CB
(V)
1000
1.0
(V)
5
200
150
100
20
15
10
50
40
30
20
10
S
5
0
0
0
21
1
1
0.1
Maximum Stable Gain vs. Frequency
V
f = 1 GHz
Parameter, Maximum Available Gain,
V
I
C
CE
CE
DC Current Transfer Ratio vs.
= 100 mA
Collector Current I
Collector Current I
= 3 V
= 3 V
Transition Frequency vs.
Frequency f (GHz)
Collector Current
Collector Current
10
10
MSG
|S
21
1
|
2
100
100
MAG
V
C
C
CE
(mA)
(mA)
= 3 V
1000
1000
10