2sc5811 Sanyo Semiconductor Corporation, 2sc5811 Datasheet - Page 2
2sc5811
Manufacturer Part Number
2sc5811
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SC5811.pdf
(4 pages)
Continued from preceding page.
Switching Time Test Circuit
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Emitter Breakdown Voltage
Storage Time
Fall Time
100
1.0
10
9
8
7
6
5
4
3
2
1
7
5
3
2
7
5
3
2
0
0.1
0
INPUT
PW=20 s
D.C. 1%
1
Parameter
2
Collector-to-Emitter Voltage, V CE -- V
2
3
50
Collector Current, I C -- A
V R
V BE = --2V
3
5
I C -- V CE
h FE -- I C
4
7
I B1
100 F
I B2
R B
1.0
5
+
6
V( BR)CEO
470 F
2
V CE (sat)
V BE (sat)
Symbol
h FE 1
h FE 2
V CC =200V
7
t stg
+
t f
3
8
OUTPUT
R L =66.7
V CE =5V
5
V CE =5V, I C =1A
V CE =5V, I C =4.5A
I C =4A, I B =1A
I C =4A, I B =1A
I C =10mA, R BE =
I C =3A, I B1 =0.5A, I B2 =--1.5A
I C =3A, I B1 =0.5A, I B2 =--1.5A
IT03895
IT03897
9
I B =0
7
10
10
2SC5811
Conditions
0.01
1.0
0.1
10
9
8
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
I C / I B =5
0.2
2
Base-to-Emitter Voltage, V BE -- V
3
0.4
Collector Current, I C -- A
V CE (sat) -- I C
5
min
I C -- V BE
800
0.6
10
7
4
1.0
Ratings
0.8
typ
2
1.0
3
max
3.0
1.5
3.0
0.2
7
V CE =5V
1.2
5
No.7415-2/4
IT03896
IT03898
7
Unit
V
V
V
s
s
1.4
10