2sc5811 Sanyo Semiconductor Corporation, 2sc5811 Datasheet

2sc5811

Manufacturer Part Number

2sc5811

Description

Npn Triple Diffused Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC5811.pdf (4 pages)

Current page: 1 of 4
Download datasheet (30Kb)

Ordering number : ENN7415

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

•

High speed.

High breakdown voltage : V CBO =1600V.

High reliability(Adoption of HVP process).

Adoption of MBIT process.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

I CES

Tstg

I CP

Horizontal Deflection Output Applications

P C

I C

Tc=25 C

V CB =800V, I E =0

V CE =1600V, R BE =0

V EB =4V, I C =0

2SC5811

Ultrahigh-Definition CRT Display

Conditions

Package Dimensions

unit : mm

2174A

Conditions

NPN Triple Diffused Planar Silicon Transistor

5.45

16.0

2.8

3.4

0.7

2.0

[2SC5811]

min

22503 TS IM TA-3850

5.6

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PMLH

Ratings

0.9

typ

Ratings

3.1

2.1

2SC5811

Continued on next page.

--55 to +150

max

1600

800

150

3.0

1.0

No.7415-1/4

Unit

Related parts for 2sc5811

2sc5811 Summary of contents

Page 1

... Symbol Conditions V CBO V CEO V EBO Tc= Tstg Symbol Conditions I CBO V CB =800V CES V CE =1600V EBO V EB =4V 2SC5811 [2SC5811] 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0 Base 5. Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1600 800 ...

Page 2

... Collector Current 2SC5811 Symbol Conditions =5V = =5V =4. (sat =4A = (sat =4A =1A V( BR)CEO I C =10mA stg I C =3A =0.5A =--1. =3A =0.5A =--1.5A OUTPUT R L =66 ...

Page 3

... Tc= Single pulse 0. 1.0 10 100 Collector-to-Emitter Voltage 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 100 Ambient Temperature 2SC5811 =200V load IT03899 1 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2003. Specifications and information herein are subject to change without notice. 2SC5811 PS No.7415-4/4 ...

Related keywords

2sc5811 datasheet
2sc5811 data sheet
2sc5811 pdf datasheet
2sc5811 component
2sc5811 part
2sc5811 distributor
2sc5811 RoHS
2sc5811 datasheet download