2sc5182-t2 California Eastern Laboratories, 2sc5182-t2 Datasheet - Page 4
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2sc5182-t2
Manufacturer Part Number
2sc5182-t2
Description
Surface Mount Npn Silicon High Frequency Transistor
Manufacturer
California Eastern Laboratories
Datasheet
1.2SC5182-T2.pdf
(22 pages)
TYPICAL PERFORMANCE CURVES
NE687 SERIES
500
200
100
30
20
50
40
10
10
10
14
12
50
20
6
8
4
1
0
1
V
CE
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
= 2V
2
COLLECTOR CURRENT vs.
2
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
INSERTION GAIN vs.
5
5
V
NE68718
CE
= 1 V
0.5
10
10
20
20 30
C
C
V
(mA)
(mA)
CE
V
CE
2 V
BE
= 1 V
f = 2 GHz
= 2 V
50
(V)
100
1.0
100
(TA = 25°C)
0.6
0.5
0.4
0.3
0.2
16
14
12
10
4
0
2
3
1
6
8
4
2
1
1
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
f = 2 GHz
FEED-BACK CAPACITANCE vs.
f = 1 MHz
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
2
2
Collector Current, I
1.0
COLLECTOR CURRENT
Collector Current, I
NOISE FIGURE vs.
5
5
2.0
NE68733
NE68718
NE68730
10
10
3.0
20
C
V
C
20 30
V
CE
(mA)
CE
(mA)
V
f = 2 GHz
= 1 V
CE
= 2 V
CB
4.0
2 V
= 1 V
(V)
50
100
5.0
100