2sc5182-t2 California Eastern Laboratories, 2sc5182-t2 Datasheet - Page 19

• Manufacturer Part Number: 2sc5182-t2
• Description: Surface Mount Npn Silicon High Frequency Transistor
• Manufacturer: California Eastern Laboratories

BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
SCHEMATIC
NE68733 NONLINEAR MODEL
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
ISE
IKR
ISC
IRB
IKF
NF
NE
BR
NR
RE
RB
BF
NC
RC
IS
0.415e-12
0.102e-12
3.3e-15
8e-17
4e-15
0.009
0.017
0.18
1.48
9.05
1.05
2.46
0.68
0.53
0.29
11.1
128
Q1
4.3
0.8
7.5
17
1.5
1
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
FC
TR
EG
TF
KF
AF
Base
C
BEPKG
L
BX
6e-12
0.53
0.27
0.75
0.37
9.55
1.78
69.1
1e-9
11.9
1.11
Q1
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
C
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
C
Q1
CEPKG
L
CX
0.05 to 5.0 GHz
V
7/97
CE
= 1 V to 2 V, I
Collector
C
0.26e-12
0.19e-12
0.96e-9
1.05e-9
0.15e-12
0.09e-12
0.09e-12
0.3e-9
0.3e-9
0.3e-9
seconds
farads
henries
ohms
volts
amps
= 1 mA to 10 mA
68733
Units