2sc5182-t2 California Eastern Laboratories, 2sc5182-t2 Datasheet - Page 18

no-image

2sc5182-t2

Manufacturer Part Number
2sc5182-t2
Description
Surface Mount Npn Silicon High Frequency Transistor
Manufacturer
California Eastern Laboratories
Datasheet
NE68730 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
IKR
ISC
IRB
IKF
ISE
NF
NE
BR
NR
RE
RB
BF
RC
NC
IS
0.415e-12
0.102e-12
3.3e-15
8e-17
4e-15
0.009
0.017
0.18
1.48
9.05
1.05
2.46
0.68
0.53
0.29
11.1
128
Q1
4.3
0.8
7.5
17
1.5
1
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
XTI
FC
ITF
TR
EG
TF
KF
AF
Base
C
BEPKG
L
BX
6e-12
0.53
0.27
0.75
0.37
9.55
1.78
69.1
1e-9
11.9
1.11
Q1
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
C
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
C
CB
CE
CBPKG
CEPKG
BEPKG
Q1
CEPKG
L
CX
0.05 to 3.0 GHz
V
10/25/96
CE
= 1 V to 2 V, I
Collector
C
0.26e-12
0.19e-12
0.5e-9
1.07e-9
0.08e-12
0.04e-12
0.04e-12
0.2e-9
0.1e-9
0.2e-9
= 1 mA to 10 mA
seconds
farads
henries
ohms
volts
amps
68730
Units

Related parts for 2sc5182-t2