m40sz100y STMicroelectronics, m40sz100y Datasheet - Page 18

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m40sz100y

Manufacturer Part Number
m40sz100y
Description
5v Or 3v Nvram Supervisor For Lpsram
Manufacturer
STMicroelectronics
Datasheet
Table 7.
1. Valid for ambient operating temperature: T
2. Measured with V
3. RSTIN internally pulled-up to V
4. Outputs deselected.
5. External SRAM must match SUPERVISOR chip V
6. For rechargeable back-up, V
7. For PFO pin (CMOS).
8. Chip enable output (E
9. For RST & BL pins (open drain).
18/25
V
Sym
V
V
will reduce battery life.
PFD
PFI
SO
Power-fail deselect
voltage
PFI input threshold
PFI hysteresis
Battery back-up
switchover voltage
DC characteristics (continued)
Parameter
OUT
and E
CON
) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents
CON
BAT
CC
open.
(max) may be considered V
through 100k resistor.
Test condition
V
V
PFI rising
CC
CC
A
= –40 to 85°C; V
= 5V(Y)
= 3V(V)
CC
specification (3V or 5V).
(1)
1.225
4.20
CC
Min
CC
– 0.5V.
= 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
M40SZ100Y
Typ
4.4
1.2
2.5
50
20
0
1.275
Max
4.50
70
1.225
2.55
Min
M40SZ100W
2.60
1.25
Typ
2.5
20
0
1.275
Max
2.70
70
Unit
mV
V
V
V

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