km416s4030b Samsung Semiconductor, Inc., km416s4030b Datasheet - Page 5

• Manufacturer Part Number: km416s4030b
• Description: Cmos Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Notes :
KM416S4030B
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM416S4030BT-G**
4. KM416S4030BT-F**
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
I
Page burst
2Banks activated
t
t
CKE
RC
OL
OL
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
Test Condition
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
(max), t
(max), t
CC
CC
A
= 0 to 70 C)
= 15ns
= 15ns
V
V
V
V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
=
=
CC
CC
CC
CC
= 15ns
= 15ns
=
=
Latency
CAS
3
2
110
145
115
-8
150
100
125
125
-H
Version
450
20
10
30
20
1
1
2
2
1
CMOS SDRAM
100
125
115
-L
REV. 4 June '98
125
110
135
-10
95
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4