km416s4030b Samsung Semiconductor, Inc., km416s4030b Datasheet - Page 4

• Manufacturer Part Number: km416s4030b
• Description: Cmos Sdram
• Manufacturer: Samsung Semiconductor, Inc.

KM416S4030B
Note :
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Notes :
Clock
RAS, CAS, WE, CS, CKE, L(U)DQM
Address
DQ
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current (Inputs)
Input leakage current (I/O pins)
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. Dout is disabled, 0V
Parameter
15
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
Parameter
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
V
DD
IN
= 3.3V, T
V
DDQ
V
OUT
.
V
A
Symbol
DD
= 23 C, f = 1MHz, V
V
V
V
V
V
, V
I
I
DDQ.
OH
OL
IL
IL
IH
IL
DDQ
V
Symbol
V
Symbol
DD
C
C
IN
C
T
C
Min
-0.3
-1.5
ADD
OUT
CLK
, V
I
3.0
2.0
2.4
P
, V
STG
OS
-1
IN
-
D
OUT
REF
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
Typ
= 0 to 70 C)
3.3
3.0
200 mV)
0
-
-
-
-
Min
2.5
2.5
2.5
4.0
V
DDQ
-55 ~ +150
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
1.5
Value
1
-
+0.3
50
1
Max
4.0
5.0
5.0
6.5
Unit
uA
uA
V
V
V
V
V
CMOS SDRAM
REV. 4 June '98
I
OH
I
Unit
OL
mA
W
Unit
V
V
C
Note
pF
pF
pF
pF
= -2mA
3,4
= 2mA
1
2
3