km416s8030bn Samsung Semiconductor, Inc., km416s8030bn Datasheet - Page 6

• Manufacturer Part Number: km416s8030bn
• Description: 128mb Sdram Shrink Tsop 16bit Banks Synchronous Dram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

KM416S8030BN
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in power-
down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM416S8030BN-G**
4. KM416S8030BN-F**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK
NS
PS CKE & CLK
NS
P
N
P
N
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
t
CKE
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
t
= 2CLKs
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
shrink-TSOP
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 0 to 70 C)
= 10ns
= 10ns
IH
V
V
V
V
/V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
IL
(max), t
(max), t
=V
=
=
DDQ
CC
CC
/V
CC
CC
= 10ns
= 10ns
SSQ)
=
=
G
F
-H
Version
140
145
210
800
1.5
20
30
20
1
1
7
5
5
Rev. 0.1 Aug. 1999
CMOS SDRAM
-L
Preliminary
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4