km416s8030bn Samsung Semiconductor, Inc., km416s8030bn Datasheet - Page 4

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km416s8030bn

Manufacturer Part Number
km416s8030bn
Description
128mb Sdram Shrink Tsop 16bit Banks Synchronous Dram Lvttl
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
KM416S8030BN
PIN CONFIGURATION (Top view)
PIN FUNCTION DESCRIPTION
CLK
CS
CKE
A
BA
RAS
CAS
WE
L(U)DQM
DQ
V
V
N.C/RFU
0
DD
DDQ
0
~ A
0
/V
Pin
~ BA
~
/V
SS
11
15
SSQ
1
System clock
Chip select
Clock enable
Address
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
Data input/output
Power supply/ground
Data output power/ground
No connection
/reserved for future use
A10/AP
LDQM
Name
V
V
V
V
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CAS
RAS
BA0
BA1
V
V
V
DDQ
DDQ
SSQ
SSQ
WE
CS
A0
A1
A2
A3
DD
DD
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
Blocks data input when L(U)DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
This pin is recommended to be left No Connection on the device.
shrink-TSOP
(0.4 mm Pin pitch)
(400mil x 441mil)
54Pin sTSOP
0
~ RA
11
SHZ
, Column address : CA
after the clock and masks the output.
Input Function
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
0
~ CA
V
DQ15
V
DQ14
DQ13
V
DQ12
DQ11
V
DQ10
DQ9
V
DQ8
V
N.C/RFU
UDQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
V
8
SS
SSQ
DDQ
SSQ
DDQ
SS
SS
Rev. 0.1 Aug. 1999
CMOS SDRAM
Preliminary

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