km416s8030bn Samsung Semiconductor, Inc., km416s8030bn Datasheet - Page 5

• Manufacturer Part Number: km416s8030bn
• Description: 128mb Sdram Shrink Tsop 16bit Banks Synchronous Dram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

KM416S8030BN
ABSOLUTE MAXIMUM RATINGS
Note :
Notes :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
15
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
Parameter
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC.The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ
,
A
V
Symbol
= 23 C, f = 1MHz, V
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
V
C
C
C
V
C
Symbol
DD
ADD
OUT
CLK
IN
IN
T
shrink-TSOP
Min
-0.3
, V
I
-10
, V
P
3.0
2.0
2.4
STG
OS
-
D
REF
OUT
DDQ
SS
= 0V, T
=1.4V
3ns.
3ns.
A
Min
200 mV)
2.5
2.5
2.5
4.0
= 0 to 70 C)
Typ
3.3
3.0
0
-
-
-
V
-55 ~ +150
DD
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
Max
10
4.0
5.0
5.0
6.5
Value
-
+0.3
50
1
Unit
Rev. 0.1 Aug. 1999
uA
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
Preliminary
I
I
OH
Unit
OL
mA
W
V
V
C
Note
= -2mA
= 2mA
Note
1
2
3
1
2
2
3