mc9s08ac128 Freescale Semiconductor, Inc, mc9s08ac128 Datasheet - Page 33

• Manufacturer Part Number: mc9s08ac128
• Description: 8-bit Hcs08 Central Processor Unit Cpu
• Manufacturer: Freescale Semiconductor, Inc

3.12
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for Flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
1
2
4
6
8
3
5
7
9
FLASH Specifications
C
P
P
P
P
C
P
C
C
P
P
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 125°C
Characteristic
5
3
(2)
MC9S08AC128 MCU Series Data Sheet, Rev. 1
Table 3-15. Flash Characteristics
2
4
Preliminary — Subject to Change
Chapter 4,
(2)
(2)
“Memory.”
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
Chapter 3 Electrical Characteristics and Timing Specifications
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
15
—
5
20,000
4000
100,000
Typ
9
4
100
—
DD
1
supply. For more detailed
Max
6.67
200
5.5
5.5
—
—
—
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
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