mb95f108bspfv Fujitsu Microelectronics, Inc., mb95f108bspfv Datasheet - Page 64
mb95f108bspfv
Manufacturer Part Number
mb95f108bspfv
Description
8-bit Proprietary Microcontrollers
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.MB95F108BSPFV.pdf
(69 pages)
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64
MB95100B Series
6. Flash Memory Program/Erase Characteristics
*1 : T
*2 : T
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
7. FRAM Program Characteristics
* : Number of data read/write
Sector erase time
(4K bytes sector)
Sector erase time
(16K bytes sector)
Byte programming time
Program/erase cycle
Power supply voltage at
program/erase
Flash memory data retention
time
Read/write cycle*
Power supply voltage at
read/write
Data retention time
measurements into normalized value at +85 °C) .
A
A
= + 25 °C, V
= + 85 °C, V
Parameter
Parameter
CC
CC
= 3.0 V, 10000 cycles
= 2.7 V, 10000 cycles
10000
20*
Min
Min
10
2.7
2.7
10
10
3
Value
Value
0.2*
0.5*
Typ
Typ
32
1
1
12.0*
3600
3.0*
Max
Max
3.3
3.6
2
2
cycle
cycle
Unit
year Average T
Unit
year T
µs
V
V
s
s
Excludes 00
Excludes 00
Excludes system-level overhead.
A
= 0 °C to +55 °C
A
= +85 °C
H
H
programming prior erasure.
programming prior erasure.
Remarks
Remarks
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