l6706 STMicroelectronics, l6706 Datasheet - Page 44

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l6706

Manufacturer Part Number
l6706
Description
Vr11.1 Single Phase Controller With Integrated Driver
Manufacturer
STMicroelectronics
Datasheet

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Layout guidelines
Note:
20.3
44/47
points far from the load will cause a non-optimum load regulation, increasing output
tolerance. Locate current reading components close to the device. The PCB traces
connecting the reading point must use dedicated nets, routed as parallel traces in order to
avoid the pick-up of any common mode noise. It's also important to avoid any offset in the
measurement and, to get a better precision, to connect the traces as close as possible to
the sensing elements. Small filtering capacitor can be added, near the controller, between
V
related connections layout.
Figure 26. Power connections and related connections layout
Boot capacitor extra charge. systems that do not use schottky diodes might show big
negative spikes on the phase pin. This spike can be limited as well as the positive spike but
has an additional consequence: it causes the bootstrap capacitor to be over-charged. This
extra-charge can cause, in the worst case condition of maximum input voltage and during
particular transients, that boot-to-phase voltage overcomes the abs. max. ratings also
causing device failures. It is then suggested in this cases to limit this extra-charge by adding
a small resistor in series to the boot diode (see
capacitive diodes.
Embedding L6706 - Based VR
When embedding the VRD into the application, additional care must be taken since the
whole VRD is a switching DC/DC regulator and the most common system in which it has to
work is a digital system such as MB or similar. In fact, latest MB has become faster and
powerful: high speed data bus are more and more common and switching-induced noise
produced by the VRD can affect data integrity if not following additional layout guidelines.
Few easy points must be considered mainly when routing traces in which high switching
currents flow (high switching currents cause voltage spikes across the stray inductance of
the trace causing noise that can affect the near traces):
Keep safe guarding distance between high current switching VRD traces and data buses,
especially if high-speed data bus to minimize noise coupling. Keep safe guard distance or
filter properly when routing bias traces for I/O sub-systems that must walk near the VRD.
Possible causes of noise can be located in the PHASE connection, MOSFET gate drive and
Input voltage path (from input bulk capacitors and HS drain). Also PGND connection must
be considered if not insisting on a power ground plane. These connections must be carefully
kept far away from noise-sensitive data bus. Since the generated noise is mainly due to the
switching activity of the VRM, noise emissions depend on how fast the current switches. To
reduce noise emission levels, it is also possible, in addition to the previous guidelines, to
reduce the current slope by properly tuning the HS gate resistor and the PHASE snubber
network.
UGATE
PHASE
LGATE
PGND
OUT
and SGND, on the CS- line to allow higher layout flexibility. Power connections and
V
C
IN
IN
L
Doc ID 15698 Rev 1
LOAD
PHASE
SGND
BOOT
Figure
VCC
To limit C
BOOT
26) and by using standard and low-
Extra-Charge
+Vcc
V
C
IN
IN
L
L6706
LOAD

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