r2j20652anp Renesas Electronics Corporation., r2j20652anp Datasheet - Page 15

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r2j20652anp

Manufacturer Part Number
r2j20652anp
Description
Integrated Driver ? Mos Fet Drmos
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
R2J20652ANP
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
R2J20652ANP
The equivalent circuit for the PWM-pin input is shown in the next figure. M1 is in the ON state during normal
operation; after the PWM input signal has stayed in the hysteresis window for 100 ns (typ.) and the tri-state detection
signal has been driven high, the transistor M1 is turned off.
When VCIN is powered up, M1 is started in the OFF state regardless of PWM Low or Open state. After PWM is
asserted high signal, M1 becomes ON and shifts to normal operation.
MOS FETs
The MOS FETs incorporated in R2J20652ANP are highly suitable for synchronous-rectification buck conversion. For
the high-side MOS FET, the drain is connected to the VIN pin and the source is connected to the VSWH pin. For the
low-side MOS FET, the drain is connected to the VSWH pin and the source is connected to the PGND pin.
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 15 of 16
PWM Pin
Figure 4 Equivalent Circuit for the PWM-pin Input
M1
20 k
20 k
VCIN
Logic
Input
DISBL#
Tri-state
detection signal
To internal control
Preliminary

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