pssi5012 Power Semiconductors, Inc., pssi5012 Datasheet - Page 4

• Manufacturer Part Number: pssi5012
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

E
E
I
CM
on
on
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
mJ
15
10
60
40
20
mJ
A
5
0
4
3
2
1
0
0
0
Fig. 7 Typ. turn on energy and switching
0
Fig. 9 Typ. turn on energy and switching
0
Fig. 11 Reverse biased safe operating area
E
V
V
R
T
on
t
d(on)
VJ
CE
GE
E
G
200
on
t
= 47 Ω
= 600 V
= ±15 V
= 125°C
r
20
400
20
40
600
800 1000 1200 1400
60
R
T
R
VJ
40
G
I
G
V
V
I
T
= 47 Ω
C
= 125°C
C
VJ
CE
GE
= 600 V
= ±15 V
= 25 A
= 125°C
80
V
A
CE
©
t
Ω
d(on)
t
42T120
42T120
r
42T120
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
100
60
150
100
50
0
160
120
80
40
0
ns
ns
V
t
t
E
Z
E
0,0001
thJC
off
off
0,001
0,01
K/W
0,1
0,00001 0,0001 0,001
mJ
12
mJ
10
8
4
0
8
6
4
2
0
1
PSIG PSI PSIS PSSI 50/12
0
0
Fig. 8 Typ. turn off energy and switching
Fig. 10 Typ. turn off energy and switching
Fig. 12
V
V
R
T
VJ
CE
GE
G
= 47Ω
= 600V
= ±15V
= 125°C
20
times versus collector current times
versus collector current
times versus gate resistor times
versus gate resistor
Typ. transient thermal impedance
RBSOA
20
single pulse
40
0,01
V
V
I
T
C
VJ
CE
GE
= 600 V
= ±15 V
= 25 A
= 125°C
60
R
40
0,1
G
I
C
E
t
off
80
A
1
t
t
d(off)
MDI...50-12P1
f
t
Ω
diode
IGBT
42T120
t
f
E
s
d(off)
42T120
off
100
60
10
600
400
200
0
800
600
400
200
0
ns
ns
t
t