pssi5012 Power Semiconductors, Inc., pssi5012 Datasheet - Page 2
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pssi5012
Manufacturer Part Number
pssi5012
Description
Igbt Module
Manufacturer
Power Semiconductors, Inc.
Datasheet
1.PSSI5012.pdf
(4 pages)
Reverse diodes (FRED)
Symbol
I
I
Symbol
V
I
t
R
R
Temperature Sensor NTC
Symbol
R
B
Module
Symbol
T
T
V
M
a
Symbol
d
d
Weight
F25
F80
RM
rr
stg
S
F
VJ
ISOL
A
thJC
thJH
25
25/50
d
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Conditions
T
T
Conditions
I
I
V
with heatsink compound (0.42 K/m.K; 50 µm)
Conditions
I
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
Strike distance in air
Conditions
T = 25°C
F
F
ISOL
C
C
R
= 30 A;
= 30 A; di
= 25°C
= 80°C
= 600 V; V
≤ 1 mA; 50/60 Hz
F
T
T
/dt = 500 A/µs; T
VJ
VJ
GE
= 25°C
= 125°C
PSIS
= 0 V
(Pin to heatsink)
VJ
(Pin to heatsink)
= 125°C
©
dimensions
2002 POWERSEM reserves the right to change limits, test conditions and
Maximum Ratings
Characteristic Values
4.75
min.
min.
Characteristic Values
11.2
11.2
min. typ.
Characteristic Values
-40...+150
-40...+150
Maximum Ratings
3375
1.5 - 2.0
1.77
typ.
14 - 18
150
5.0
typ.
2.4
2.6
27
24
3000
49
31
50
max.
max.
max.
5.25 kΩ
2.7
1.3 K/W
PSIG PSI PSIS PSSI 50/12
lb.in.
m/s
K/W
N m
mm
mm
°C
°C
V~
ns
K
A
A
V
V
A
g
2
PSSI
PSI
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSIG