pssi5012 Power Semiconductors, Inc., pssi5012 Datasheet - Page 3

• Manufacturer Part Number: pssi5012
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

I
V
I
C
C
GE
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
80
60
40
20
80
60
40
20
20
15
10
A
A
V
0
0
5
0
0
4
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
T
VJ
1
= 125°C
6
V
40
GE
= 17 V
2
V
I
C
CE
15 V
13 V
8
= 600V
= 25A
V
3
CE
T
VJ
= 20V
10
80
= 25°C
4
V
V
T
12
VJ
CE
GE
= 25°C
5
120
Q
G
14
6
nC
©
11V
V
42T120
42T120
V
9V
42T120
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
160
16
7
I
I
C
RM
I
F
80
60
40
20
50
40
30
20
10
50
40
30
20
10
A
A
A
0
0
0
PSIG PSI PSIS PSSI 50/12
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
t
rr
I
RM
1
200
free wheeling diode
free wheeling diode
1
T
2
VJ
V
GE
= 125°C
400
= 17V
15V
13V
3
2
4
600
V
-di/dt
F
V
CE
5
T
T
V
I
3
F
VJ
VJ
T
R
800
= 15 A
VJ
= 600 V
A/µs
= 25°C
= 125°C
= 125°C
6
V
11V
9V
V
42T120
1000
7
4
200
160
120
80
40
0
42T120
ns
42T120
t
rr