tc58fvt160 TOSHIBA Semiconductor CORPORATION, tc58fvt160 Datasheet - Page 18

• Manufacturer Part Number: tc58fvt160
• Description: 16-mbit 2m ? 8 Bits / 1m ? 16 Bits Cmos Flash Memory
• Manufacturer: TOSHIBA Semiconductor CORPORATION

DC CHARACTERISTICS
AC TEST CONDITIONS
I
I
V
V
I
I
I
I
I
I
I
V
(1) The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.
Input Pulse Level
Input Pulse Rise and Fall Time (10%~90%)
Timing Measurement Reference Level (input)
Timing Measurement Reference Level (output)
Output Load
LI
LO
DDO1
DDO2
DDO3
DDO4
DDS1
DDS2
ID
OH
OL
LKO
SYMBOL
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
V
V
V
V
Erase-Suspend Current
V
V
(Automatic Sleep Mode
High-Voltage Input Current for
A9, OE and RESET
Low-V
DD
DD
DD
DD
DD
DD
Average Read Current
Average Program Current
Average Erase Current
Average Program-while-
Standby Current
Standby Current
DD
PARAMETER
Lock-out Voltage
PARAMETER
(1)
)
0 V ≤ V
0 V ≤ V
I
I
I
V
t
V
V
V
or RESET = V
V
V
11.4 V ≤ V
CE = RESET = V
OH
OH
OL
CYCLE
IN
IN
IN
IN
IH
IL
= V
= 4.0 mA
= V
= V
= V
= V
= V
= −0.1 mA
= −2.5 mA
SS
IN
OUT
IH
IH
IH
IH
DD
= t
/V
/V
/V
/V
≤ V
RC
ID
CONDITION
IL
IL
IL
IL
≤ V
≤ 12.6 V
, I
, I
, I
, I
DD
= 100 ns
OUT
OUT
OUT
OUT
DD
SS

TC58FVT160/B160AFT/AXB-70,-10
C
L
V
= 0 mA
= 0 mA
= 0 mA
= 0 mA
(100 pF) + 1 TTL Gate
DD
0.85 × V
V
DD
CONDITION
1.5 V, 1.5 V
1.5 V, 1.5 V
V
MIN
2.3










DD
− 0.4
5 ns
, 0.0 V
DD
/
C
2002-08-06 18/41
L
(30 pF) + 1 TTL Gate
MAX
0.4
2.5
±1
±1
30
15
15
15
35


5
5
UNIT
mA
µA
µA
V
V