tc58fvt160 TOSHIBA Semiconductor CORPORATION, tc58fvt160 Datasheet

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tc58fvt160

Manufacturer Part Number
tc58fvt160
Description
16-mbit 2m ? 8 Bits / 1m ? 16 Bits Cmos Flash Memory
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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16-MBIT (2M × 8 BITS / 1M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip.
FEATURES
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
• The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
• The information contained herein is subject to change without notice.
The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document
shall be made at the customer’s own risk.
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
Power supply voltage
Operating temperature
Organization
Functions
V
Ta = −40°C~85°C
2M × 8 bits / 1M × 16 bits
Auto Program, Auto Erase
Fast Program Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
DD
= 2.7 V~3.6 V
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Block erase architecture
Boot block architecture
Mode control
Erase/Program cycles
Access time
Power consumption
Package
1 × 16 Kbytes / 2 × 8 Kbytes
1 × 32 Kbytes / 31 × 64 Kbytes
TC58FVT160AFT/AXB: top boot block
TC58FVB160AFT/AXB: bottom boot block
Compatible with JEDEC standard commands
10
70 ns
100 ns
5 µA
30 mA
15 mA
TC58FVT160/B160AFT:
TC58FVT160/B160AXB:
TC58FVT160/B160AFT/AXB-70,-10
5
cycles typ.
TSOPI48-P-1220-0.50 (weight: 0.51 g)
P-TFBGA48-0608-0.80AZ (weight: 0.090 g)
(C
(C
(Standby)
(Read operation)
(Program/Erase operations)
L
L
: 30 pF)
: 100 pF)
2002-08-06 1/41
000630EBA1

Related parts for tc58fvt160

tc58fvt160 Summary of contents

Page 1

... DESCRIPTION The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. ...

Page 2

... DQ11 35 DQ3 RESET 34 DQ10 33 DQ2 NC 32 DQ9 V 31 DQ1 DD 30 DQ8 V 29 DQ0 TC58FVT160/B160AXB A13 RESET A8 A12 NC A10 A14 A19 A11 A15 DQ5 DQ7 A16 DQ12 DQ14 BYTE V DQ13 DQ15 DD DQ4 DQ6 V SS Data Input/Output ...

Page 3

... BLOCK DIAGRAM Control Circuit t OEHP Command RESET Register Control Circuit OE A0 A19 A-1 TC58FVT160/B160AFT/AXB-70,- DQ0 Buffer Auto Sequence Control Circuit Program Erase Circuit Circuit Column Decoder & Sense Amp Memory Cell Array Erase Block Decoder DQ15 I/O Buffer ...

Page 4

... TC58FVT160A Device Code TC58FVB160A Verify Block Protect Notes (1) DQ8~DQ14 are High-Z and DQ15/A-1 is Address Input in Byte Mode. (2) BA: Block Address (3) 0001H - Protected Block 0000H - Unprotected Block TC58FVT160/B160AFT/AXB-70,- RESET ...

Page 5

... RA: Read Address (2) RD: Read Data (3) IA: ID Read Address (A6, A1, A0) Manufacturer Code = ( Device Code = ( (4) ID: ID Data (5) PA: Program Address (6) PD: Program Data TC58FVT160/B160AFT/AXB-70,-10 SECOND BUS THIRD BUS FOURTH BUS WRITE CYCLE WRITE CYCLE WRITE CYCLE Data Addr. Data Addr ...

Page 6

... OPERATION MODES In addition to the Read, Write and Erase Modes, the TC58FVT160/B160A features many functions including block protection and data polling. When incorporating the device into a deign, please refer to the timing charts and flowcharts in combination with the description below. READ MODE To read data from the memory cell array, set the device to Read Mode. In Read Mode the device can perform high-speed random access as asynchronous ROM ...

Page 7

... BYTE /Word Mode BYTE is used select Word Mode (16 bits) or Byte Mode (8 bits) for the TC58FVT160/B160A BYTE , the device will operate in Word Mode. Read data or write commands using DQ0~DQ15. When V input to BYTE , read data or write commands using DQ0~DQ7. DQ15/A-1 is used as the lowest address. ...

Page 8

... Auto-Program Mode The TC58FVT160/B160A can be programmed in either byte or word units. Auto-Program Mode is set using the Program command. The program address is latched on the falling edge of the WE signal and data is latched on the rising edge of the fourth Bus Write cycle (with WE control). Auto programming starts on the rising edge of the WE signal in the fourth Bus Write cycle ...

Page 9

... In this case either abandon use of the device altogether, or perform a Block Erase on each block, identify the failed block, and stop using it. The host processor must take measures to prevent subsequent use of the failed block. TC58FVT160/B160AFT/AXB-70,-10 2002-08-06 9/41 ...

Page 10

... Block Protect command must be input again. Removing the V mode. Temporary Block Unprotection The TC58FVT160/B160A has a temporary block unprotection feature which disables block protection for all protected blocks. Unprotection is enabled by applying V can be performed on all blocks. The device returns to its previous state when V pin ...

Page 11

... Hidden ROM Area The TC58FVT160/B160A features a 64-Kbyte hidden ROM area which is separate from the memory cells. The area consists of one block. Data Read, Write and Protect can be performed on this block. Because Protect cannot be released, once the block is protected, data in the block cannot be overwritten. ...

Page 12

... COMMON FLASH MEMORY INTERFACE (CFI) The TC58FVT160/B160A conforms to the CFI specifications. To read information from the device, input the Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the Reset command. CFI CODE TABLE ADDRESS A6~A0 DATA DQ15~DQ0 ...

Page 13

... Block Protect 0: Not supported X: Number of blocks per group Block Temporary Unprotect 0: Not supported 1: Supported Block Protect/Unprotect scheme Simultaneous operation 0: Not supported 1: Supported Burst Mode 0: Not supported Page Mode 0: Not supported Top/Bottom Boot Block Flag 2: TC58FVB160 3: TC58FVT160 Program suspend 0: Not supported 1: Supported 2002-08-06 13/41 ...

Page 14

... HARDWARE SEQUENCE FLAGS The TC58FVT160A/B160A has a Hardware Sequence flag which allows the device status to be determined during an auto mode operation. The output data is read out using the same timing as that used when Read Mode. The output can be either High or Low. ...

Page 15

... Programming Mode, DQ2 will output BUSY (READY/ ) The TC58FVT160A/B160A has a RY state) indicates that an Auto-Program or auto-erase operation is in progress (Ready state) indicates that the operation has finished and that the device can now accept a new command. operation has failed outputs a 0 after the rising edge the last command cycle ...

Page 16

... DATA PROTECTION The TC58FVT160/B160A includes a function which guards against malfunction or data corruption. Protection against Program/Erase Caused by Low Supply Voltage To prevent malfunction at power-on or power-down, the device will not accept commands while this state, command input is ignored. LKO If V drops below V during an Auto Operation, the device will terminate Auto-Program execution. In this ...

Page 17

... High-Level Voltage for A9, OE and RESET ID Ta Operating Temperature (1) −2 V (pulse width max) ( (pulse width max) (3) Do not apply V when the supply voltage is not within the device’s recommended operating voltage range. ID TC58FVT160/B160AFT/AXB-70,-10 −0.6~V −0.6~V (1) PARAMETER PARAMETER PARAMETER (3) RANGE UNIT − ...

Page 18

... The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns. AC TEST CONDITIONS PARAMETER Input Pulse Level Input Pulse Rise and Fall Time (10%~90%) Timing Measurement Reference Level (input) Timing Measurement Reference Level (output) Output Load TC58FVT160/B160AFT/AXB-70,-10 CONDITION 0 V ≤ V ≤ ≤ V ≤ V ...

Page 19

... PROGRAM AND ERASE CHARACTERISTICS SYMBOL PARAMETER Auto-Program Time (Byte Mode) t PPW Auto-Program Time (Word Mode) t Auto Chip Erase Time PCEW t Auto Block Erase Time PBEW t Erase/Program Cycle EW TC58FVT160/B160AFT/AXB-70,-10 PRODUCT NAME OUTPUT CAPACITANCE LOAD ( MIN 70      ...

Page 20

... CE Set-up time BYTE Transition CEBTS t BYTE to Output High-Z BTD t Program Suspend Command to Suspend Mode SUSP t Program Resume Command to Program Mode RESP t Erase Suspend Command to Suspend Mode SUSE t Erase Resume Command to Erase Mode RESE TC58FVT160/B160AFT/AXB-70,-10 MIN Control Control Control) ...

Page 21

... Read / ID Read Operation Address AHW t WE OEH D OUT ID Read Operation (apply Hi-Z OUT Read Mode TC58FVT160/B160AFT/AXB-70,-10 Data invalid ACC OEE t CEE Hi ACC t VPS Manufacturer code ID Read Mode ...

Page 22

... This is the timing of the Command Write Operation. The timing which is described in the following pages is essentially the same as the timing shown on this page. WE Control • Address Control • Address TC58FVT160/B160AFT/AXB-70,-10 t CMD Command address CES CEH t t WEHH WELH Command data t ...

Page 23

... Read Mode (input of ID Read command sequence) (Continued) Address 555H t CMD AAH IN D OUT ID Read Mode (input of Reset command sequence) Note: Word Mode address shown. TC58FVT160/B160AFT/AXB-70,-10 2AAH 555H 00H t RC 55H 90H Manufacturer code Hi-Z ID Read Mode 2AAH 555H F0H 55H Hi-Z ...

Page 24

... Auto Chip Erase / Auto Block Erase Operation ( Address 555H 2AAH t CMD OES WE AAH VDS V DD Note: Word Mode address shown. BA: Block address for Auto Block Erase operation TC58FVT160/B160AFT/AXB-70,-10 2AAH 555H PA t CHW 55H A0H PD Hi-Z WE Control) 555H 555H 55H 80H AAH PA t OEHP ...

Page 25

... Auto Chip Erase / Auto Block Erase Operation ( 555H 2AAH Address t CMD OES WE AAH VDS V DD Note: Word Mode address shown. BA: Block address for Auto Block Erase operation TC58FVT160/B160AFT/AXB-70,-10 2AAH 555H PA 55H A0H PD Hi-Z CE Control) 555H 555H 55H 80H AAH PA t PPW t OEHP ...

Page 26

... Address OES WE t DF1 t DF2 OUT OUT Suspend Mode PA: Program address BA: Block address RA: Read address Flag: Hardware Sequence flag TC58FVT160/B160AFT/AXB-70,- OUT /t SUSE Suspend Mode t /t RESP RESE 30H Hi-Z Program/Erase Mode Hi-Z PA/ Flag ...

Page 27

... during Auto Program/Erase Operation Hardware Reset Operation WE RESET Read after RESET Address RESET D Hi-Z OUT TC58FVT160/B160AFT/AXB-70,-10 Command input sequence During operation t BUSY READY ACC Output data valid t OH 2002-08-06 27/41 ...

Page 28

... BYTE during Read Operation CE t CEBTS OE BYTE DQ0~DQ7 DQ8~DQ14 DQ15/A-1 BYTE during Write Operation CE WE BYTE TC58FVT160/B160AFT/AXB-70,-10 t BTD Data Output Data Output Data Output t ACC Data Output Address Input 2002-08-06 28/41 ...

Page 29

... Last Address Command Address t CMD OEHP WE Last D Command IN Data DQ2/DQ6 t BUSY PA: Program address BA: Block address *DQ2/DQ6 stops toggling when auto operation has been completed. TC58FVT160/B160AFT/AXB-70,-10 Polling) PA/ PPW PCEW PBEW ACC DQ 7 Valid Invalid Valid PA/BA t OEHT t /t ...

Page 30

... Block Protect 1 Operation Address VPT VPS WE t CESP CE D OUT BA: Block address *: 01H indicates that block is protected. TC58FVT160/B160AFT/AXB-70,-10 Block Protect Verify Block Protect BA t VPH t t PPLH VPH t OE Hi-Z 01H* Hi-Z 2002-08-06 30/41 ...

Page 31

... Block Protect 2 Operation Address t CMD VPS RESET D 60H IN D OUT BA: Block address Address of next block *: 01H indicates that block is protected. TC58FVT160/B160AFT/AXB-70,- CMD CMD t PPLH 60H 40H 60H 01H* 2002-08-06 31/41 ...

Page 32

... FLOWCHARTS Auto Program Address = Address + 1 Note: The above command sequence takes place in Word Mode. TC58FVT160/B160AFT/AXB-70,-10 Start Auto-Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes Auto Program Completed Auto-Program Command Sequence (address/data) 555H/AAH 2AAH/55H 555H/A0H Program Address/ Program Data ...

Page 33

... Fast Program Address = Address + 1 Fast Program Set Command Sequence (Address/Data) 555H/AAH 2AAH/55H 555H/20H Note: The above command sequence takes place in word mode. TC58FVT160/B160AFT/AXB-70,-10 Start Fast Program Set Command Sequence (see below) Fast Program Command Sequence (see below) DATA Polling or Toggle Bit No ...

Page 34

... Auto Chip Erase Command Sequence (address/data) 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H Note: The above command sequence takes place in Word Mode. TC58FVT160/B160AFT/AXB-70,-10 Start (see below) DATA Polling or Toggle Bit Auto Erase Completed Auto Block / Auto-Multi Block Erase Command Sequence (address/data) 555H/AAH ...

Page 35

... VA: Byte address for programming Any of the addresses within the block being erased during a Block Erase operation “Don’t care” during a Chip Erase operation Any address not within the current block during an Erase Suspend operation TC58FVT160/B160AFT/AXB-70,-10 Yes DQ7 must be rechecked even if DQ5 = 1 because DQ7 may change at the same time as DQ5 ...

Page 36

... Wait for 4 µ Wait for 4 µ Verify Block Protect Data = 01H? Yes Protect Another Block? Remove V Block Protect Complete BPA: Block Address and ID Read Address (A6, A1, A0) ID Read Address = ( TC58FVT160/B160AFT/AXB-70,- PLSCNT = PLSCNT + PLSCNT = 25? Yes Device Failed ...

Page 37

... Verify Block Protect Data = 01H? Yes Protect Another Block? Remove V ID Reset Command Block Protect Complete BPA: Block Address and ID Read Address (A6, A1, A0) ID Read Address = ( TC58FVT160/B160AFT/AXB-70,-10 ID PLSCNT = PLSCNT + 1 No PLSCNT = 25? Yes Remove V No from RESET Reset Command Device Failed ...

Page 38

... BLOCK ERASE ADDRESS TABLES (1) TC58FVT160A (top boot block) BLOCK ADDRESS BLOCK # A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BA4 BA5 BA6 BA7 ...

Page 39

... BA31 × BA32 × BA33 × BA34 × TC58FVT160/B160AFT/AXB-70,-10 BLOCK SIZE (Kbytes/Kwords) BYTE MODE 0 16/8 0000h~3FFFh × 8/4 4000h~5FFFh 1 1 8/4 6000h~7FFFh × × 32/16 8000h~FFFFh × × 64/32 10000h~1FFFFh 64/32 20000h~2FFFFh × × 64/32 30000h~3FFFFh × ...

Page 40

... PACKAGE DIMENSIONS TC58FVT160/B160AFT/AXB-70,-10 2002-08-06 40/41 Unit: mm ...

Page 41

... PACKAGE DIMENSIONS TC58FVT160/B160AFT/AXB-70,-10 2002-08-06 41/41 Unit: mm ...

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