tc58fvm5t2a TOSHIBA Semiconductor CORPORATION, tc58fvm5t2a Datasheet

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tc58fvm5t2a

Manufacturer Part Number
tc58fvm5t2a
Description
32mbit 4m U 8 Bits/2m U 16 Bits Cmos Flash Memory
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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32MBIT (4M u 8 BITS/2M u 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
flash memory organized as 4194304 words u 8 bits or as 2097152 words u 16 bits. The TC58FVM5T2A/B2A/T3A/B3
A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The
commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the
chip. The TC58FVM5T2A/B2A/T3A/B3A also features a Simultaneous Read/Write operation so that data can be
read during a Write or Erase operation.
FEATURES
x Power supply voltage
x Operating temperature
x Organization
x Functions
x Block erase architecture
x Boot block architecture
The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
V
Ta
4M u 8 bits/2M u 16 bits
8 u 8 Kbytes/63 u 64 Kbytes
TC58FVM5T2A/3A: top boot block
TC58FVM5B2A/3A: bottom boot block
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
Simultaneous Read/Write
Page Read
DD
40qC~85qC
2.3 V~3.6 V
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
x Organization of àBanks
x Mode control
x Erase/Program cycles
x Access Time (Random/Page)
x Power consumption
x Package
TC58FVM5**AFT:
TC58FVM5**AXB:
TC58FVM5T2A
TC58FVM5B2A
TC58FVM5T3A
TC58FVM5B3A
Compatible with JEDEC standard commands
10
10 PA (Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
5 mA (Page Read operation)
11 mA (Address Increment Read operation)
2.7~3.6 V
2.3~3.6 V
5
V
cycles typ.
TSOPI48-P-1220-0.50 (weight: 0.51 g)
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
Rate of Size
DD
TC58FVM5(T/B)(2/3)A(FT/XB)65
65 ns/25 ns
70 ns/30 ns
CL
30 pF
BK0
1
1
3
1
CL
70 ns/30 ns
75 ns/35 ns
BK1
3
3
3
1
2003-01-29 1/63
100 pF
BK2
3
3
1
3
BK3
1
1
1
3

Related parts for tc58fvm5t2a

tc58fvm5t2a Summary of contents

Page 1

... DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words u 8 bits or as 2097152 words u 16 bits. The TC58FVM5T2A/B2A/T3A/B3 A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip ...

Page 2

... Ordering information TC58 Ordering type TC58FVM5T2AFT65 TC58FVM5B2AFT65 TC58FVM5T3AFT65 TC58FVM5B3AFT65 TC58FVM5T2AXB65 TC58FVM5B2AXB65 TC58FVM5T3AXB65 TC58FVM5B3AXB65 TC58FVM5(T/B)(2/3)A(FT/XB)65 Speed version Package FT TSOP XB FBGA Design rule A 0.16 Pm Function/Boot block architecture/Bank ratio T2 Page mode/Top boot block/1:3:3:1 B2 Page mode/Bottom boot block/1:3:3:1 T3 Page mode/Top boot block/3:3:1:1 ...

Page 3

PIN ASSIGNMENT (TOP VIEW) A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 9 A20 RESET /ACC A18 16 A17 ...

Page 4

... BLOCK DIAGRAM /ACC Control Circuit WE BYTE RESET CE Command Register OE A0 A20 A-1 TC58FVM5(T/B)(2/3)A(FT/XB) Buffer Memory Cell Memory Cell Memory Cell Array Array Array Bank0 Bank1 Bank2 2003-01-29 4/63 DQ0 DQ15 I/O Buffer Data Latch Memory Cell Array Bank3 ...

Page 5

... (1) DQ8~DQ14 are High-Z and DQ15/A-1 is Address Input in Byte Mode. Addresses are A20~A0 in Word Mode ( BYTE (2) Pulse input ID CODE TABLE CODE TYPE Manufacturer Code TC58FVM5T2A TC58FVM5B2A Device Code TC58FVM5T3A TC58FVM5B3A Verify Block Protect Notes ...

Page 6

COMMAND SEQUENCES BUS FIRST BUS COMMAND WRITE WRITE CYCLE SEQUENCE CYCLES Addr. REQ’D Read/Reset 1 XXXh Word 555h Read/Reset 3 Byte AAAh Word 555h ID Read 3 Byte AAAh Word 555h Auto-Program 4 Byte AAAh Word 11 555h Auto PageProgram ...

Page 7

... The TC58FVM5T2A/B2A/T3A/B3A has a total of four banks (4Mbits: 12Mbits: 12Mbits: 4Mbits ). Banks can be switched between using the bank addresses (A20~A18). For a description of bank blocks and addresses, please refer to the Block Address Table and Block Size Table ...

Page 8

... output from address BK  01. From other banks data are output from the memory cells. Inputting a Reset command releases ID Read Mode and returns the device to Read Mode. Access time in ID Read Mode is the same as that in Read Mode. For a list of the codes, please refer to the ID Code Table ...

Page 9

... Read Mode. BYTE /Word Mode BYTE is used select Word Mode (16 bits) or Byte Mode (8 bits) for the TC58FVM5T2A/B2A/T3A/B3A input to BYTE , the device will operate in Word Mode. Read data or write commands using DQ0~DQ15. When V is input to BYTE , read data or write commands using DQ0~DQ7. DQ15/A-1 is used as the lowest IL address ...

Page 10

... Auto-Program Mode The TC58FVM5T2A/B2A/T3A/B3A can be programmed in either byte or word units. Auto-Program Mode is set using the Program command. The program address is latched on the falling edge of the WE signal and data is latched on the rising edge of the fourth Bus Write cycle (with WE control). Auto programming starts on the rising edge of the WE signal in the fourth Bus Write cycle ...

Page 11

... The Auto Chip Erase Mode is set using the Chip Erase command. An Auto Chip Erase operation starts on the rising edge the sixth bus cycle. All memory cells are automatically preprogrammed to 0, erased and verified as erased by the chip. The device status is indicated by the Hardware Sequence flag. ...

Page 12

... Command Register and enter Read Mode. The Erase Hold Time restarts on each successive rising edge Once operation starts, all memory cells in the selected block are automatically preprogrammed to 0, erased and verified as erased by the chip. The device status is indicated by the setting of the Hardware Sequence flag ...

Page 13

... Block Protect command must be input again. Removing the V mode. Temporary Block Unprotection The TC58FVM5T2A/B2A/T3A/B3A has a temporary block unprotection feature which disables block protection for all protected blocks. Unprotection is enabled by applying V Erase operations can be performed on all blocks except the boot blocks which have been protected by the Boot Block Protect operation ...

Page 14

... Hidden ROM Area The TC58FVM5T2A/B2A/T3A/B3A features a 64-Kbyte hidden ROM area which is separate from the memory cells. The area consists of one block. Data Read, Write and Protect can be performed on this block. Because Protect cannot be released, once the block is protected, data in the block cannot be overwritten. ...

Page 15

... COMMON FLASH MEMORY INTERFACE (CFI) The TC58FVM5T2A/B2A/T3A/B3A conforms to the CFI specifications. To read information from the device, input the Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the Reset command. CFI CODE TABLE ADDRESS A6~A0 DATA DQ15~DQ0 ...

Page 16

... Simultaneous operation 0: Not supported 1: Supported Burst Mode 0: Not supported Page Mode 0: Not supported 1: Supported V (min) voltage ACC DQ7~DQ4 DQ3~DQ0: 100 mV V (max) voltage ACC DQ7~DQ4 DQ3~DQ0: 100 mV Top/Bottom Boot Block Flag 2: TC58FVM5B2A 3: TC58FVM5T2A Program Suspend 0: Not supported 1: Supported 2003-01-29 16/63 ...

Page 17

... Bank1 Region information X Number of blocks in Bank1 TC58FVM5T2A: 18h TC58FVM5B2A: 18h TC58FVM5T3A: 18h TC58FVM5B3A: 08h Bank2 Region information X Number of blocks in Bank2 TC58FVM5T2A: 18h TC58FVM5B2A: 18h TC58FVM5T3A: 08h TC58FVM5B3A: 18h Bank3 Region information X Number of blocks in Bank3 TC58FVM5T2A: 0Fh TC58FVM5B2A: 08h TC58FVM5T3A: 0Fh TC58FVM5B3A: 18h 2003-01-29 17/63 ...

Page 18

... HARDWARE SEQUENCE FLAGS The TC58FVM5T2A/B2A/T3A/B3A has a Hardware Sequence flag which allows the device status to be determined during an auto mode operation. The output data is read out using the same timing as that used when Read Mode. The IL The device re-enters Read Mode automatically after an auto mode operation has been completed successfully. The Hardware Sequence flag is read to determine the device status and the result of the operation is verified by comparing the read-out data with the original data ...

Page 19

... Programming Mode, DQ2 will output BUSY (READY/ ) TC58FVM5T2A/B2A/T3A/B3A has a (Busy state) indicates that an Auto-Program or auto-erase operation is in progress (Ready state) indicates that the operation has finished and that the device can now accept a new command. an operation has failed outputs a 0 after the rising edge the last command cycle ...

Page 20

... DATA PROTECTION The TC58FVM5T2A/B2A/T3A/B3A includes a function which guards against malfunction or data corruption. Protection against Program/Erase Caused by Low Supply Voltage To prevent malfunction at power-on or power-down, the device will not accept commands while this state, command input is ignored. LKO If V drops below V during an Auto Operation, the device will terminate Auto-Program execution. In ...

Page 21

ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER V V Supply Voltage Input Voltage IN V Input/Output Voltage DQ V Maximum Input Voltage for A9, OE and RESET IDH V Maximum Input Voltage for ACCH P Power Dissipation D T ...

Page 22

DC CHARACTERISTICS SYMBOL PARAMETER I Input Leakage Current LI I Output Leakage Current LO V Output High Voltage OH V Output Low Voltage OL V Average Random Read DD I DDO1 Current I V Average Program Current V DDO2 DD ...

Page 23

... Auto-Program Time (Word Mode) t Auto-Page program time PPAW t Auto Chip Erase Time PCEW t Auto Block Erase Time PBEW t Erase/Program Cycle EW * Auto Chip Erase Time and Auto Block Erase Time include internal pre program time. TC58FVM5(T/B)(2/3)A(FT/XB)65 TC58FVM5T2A/B2A/T3A/B3A VDD 2.7-3 100 pF MIN MAX MIN MAX ...

Page 24

COMMAND WRITE/PROGRAM/ERASE CYCLE SYMBOL PARAMETER t Command Write Cycle Time CMD Address Set-up Time/ BYTE Set-up Time tAS t Address Hold Time/ BYTE Hold Time AH t Data Set-up Time DS t Data Hold Time Low-Level Hold ...

Page 25

TIMING DIAGRAMS Read/ID Read Operation Address OEH D OUT ID Read Operation (apply Hi-Z OUT Read Mode ...

Page 26

Address(A3-20))) t RC Address(0-2) t ACC OUT Hi-Z Read after command input (Only Hidden Rom/CFI Read) Last command address Address Command data D OUT TC58FVM5(T/B)(2/3)A(FT/XB)65 t PRC PACC ...

Page 27

Command Write Operation This is the timing of the Command Write Operation. The timing which is described in the following pages is essentially the same as the timing shown on this page. WE Control x Address ...

Page 28

ID Read Operation (input command sequence) 555h Address t CMD OES WE D AAh IN D OUT Read Mode (input of ID Read command sequence) (Continued) Address 555h t CMD AAh IN D ...

Page 29

WE Auto-Program Operation ( Control) Address 555h t CMD OES WE D AAh IN D OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data TC58FVM5(T/B)(2/3)A(FT/XB)65 2AAh 555h PA 55h A0h ...

Page 30

Auto Page Program Operation ( Address(A3-20) 555h 2AAh 555h Address(A0- OES WE AAh 55h E6h OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program Data TC58FVM5(T/B)(2/3)A(FT/XB)65 WE Control) ...

Page 31

Auto Chip Erase/Auto Block Erase Operation ( Address 555h 2AAh t CMD OES WE D AAh IN t VDS V DD Note: Word Mode address shown. BA: Block address for Auto Block Erase operation Auto-Program Operation ( ...

Page 32

Auto Page Program Operation ( Address(A3-20) 555h 2AAh 555h Address(A0- OES WE AAh 55h E6h OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data TC58FVM5(T/B)(2/3)A(FT/XB)65 Control) CE ...

Page 33

Auto Chip Erase/Auto Block Erase Operation ( 555h 2AAh Address t CMD OES WE D AAh IN t VDS V DD Note: Word Mode address shown. BA: Block address for Auto Block Erase operation TC58FVM5(T/B)(2/3)A(FT/XB)65 CE Control) ...

Page 34

Program/Erase Suspend Operation Address B0h IN Hi-Z D OUT t SUSP Program/Erase Mode RA: Read address Program/Erase Resume Operation RA Address OES WE t DF1 t DF2 D IN ...

Page 35

during Auto Program/Erase Operation Hardware Reset Operation WE RESET RESET Read after Address RESET D Hi-Z OUT TC58FVM5(T/B)(2/3)A(FT/XB)65 Command input sequence During operation t BUSY ...

Page 36

BYTE during Read Operation CE t CEBTS OE BYTE DQ0~DQ7 DQ8~DQ14 DQ15/A-1 BYTE during Write Operation CE WE BYTE TC58FVM5(T/B)(2/3)A(FT/XB)65 t BTD Data Output Data Output Data Output t ACC Data Output Address Input 2003-01-29 36/63 ...

Page 37

DATA Hardware Sequence Flag ( Last Address Command Address t CMD OEHP WE Last D Command IN Data DQ7 DQ0~DQ6 t BUSY PA: Program address BA: Block address Hardware Sequence Flag (Toggle bit) Address ...

Page 38

Block Protect 1 Operation Address VPT VPS WE t CESP CE D OUT BA: Block address *: 01h indicates that block is protected. TC58FVM5(T/B)(2/3)A(FT/XB)65 Block ...

Page 39

Block Protect 2 Operation Address t CMD VPS RESET D 60h IN D OUT BA: Block address Address of next block *: 01h indicates that block ...

Page 40

FLOWCHARTS Auto-Program Address Address  1 Note: The above command sequence takes place in Word Mode. TC58FVM5(T/B)(2/3)A(FT/XB)65 Start Auto-Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes Auto-Program Completed Auto-Program Command Sequence (address/data) 555h/AAh 2AAh/55h ...

Page 41

Auto-Page Program Address Address  1 Program address (A2=0,A1=0,A0=0) / Program data Program address (A2=0,A1=0,A0=1) / Program data Program address (A2=0,A1=1,A0=0) / Program data Program address (A2=0,A1=1,A0=1) / Program data TC58FVM5(T/B)(2/3)A(FT/XB)65 START Auto page program command sequence ( see below ...

Page 42

Fast Program Address Address  1 Fast Program Set Command Sequence (address/data) 555h/AAh 2AAh/55h 555h/20h TC58FVM5(T/B)(2/3)A(FT/XB)65 Start Fast Program Set Command Sequence (see below) Fast Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes Program ...

Page 43

Auto Erase Auto Erase Command Sequence Auto Chip Erase Command Sequence (address/data) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note: The above command sequence takes place in Word Mode. TC58FVM5(T/B)(2/3)A(FT/XB)65 Start (see below) DATA Polling or Toggle Bit Auto Erase Completed ...

Page 44

DATA DQ7 Polling Start Read Byte (DQ0~DQ7) Addr. VA DQ7 Data DQ5 1? Yes Read Byte (DQ0~DQ7) Addr. VA DQ7 Data? No Fail DQ6 Toggle Bit Start Read Byte (DQ0~DQ7) Addr. VA DQ6 Toggle? Yes No DQ5 1? ...

Page 45

Block Protect 1 Start PLSCNT Set up Block Address Addr. Wait for Wait for Wait for 100 Ps WE Wait for Wait for Verify Block Protect ...

Page 46

Block Protect 2 Start RESET Wait for 4 Ps PLSCNT Block Protect 2 Command First Bus Write Cycle (XXXh/60h) Set up Address Addr. Block Protect 2 Command Second Bus Write Cycle (BPA/60h) Wait for 100 Ps Block Protect 2 Command ...

Page 47

... BLOCK ADDRESS TABLES (1) TC58FVM5T2A (top boot block) BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BK0 BA4 BA5 BA6 BA7 BA8 BA9 ...

Page 48

BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA32 BA33 BA34 BA35 BA36 H L ...

Page 49

BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 ô BA64 ô BA65 BA66 BK3 BA67 H ...

Page 50

TC58FVM5B2A (bottom boot block) BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BA4 L ...

Page 51

BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA31 BA32 BA33 BA34 BK1 BA35 L ...

Page 52

BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 BA64 BA65 BA66 BK3 BA67 H ...

Page 53

TC58FVM5T3A (top boot block) BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BA4 L ...

Page 54

BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA32 BA33 BA34 BA35 BA36 H L ...

Page 55

BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 ô BA64 ô BA65 BA66 BK3 BA67 H ...

Page 56

TC58FVM5B3A (bottom boot block) BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BA4 L ...

Page 57

BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA31 BA32 BA33 BA34 BA35 L H ...

Page 58

BLOCK ADDRESS BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 BA64 BA65 BA66 BK3 BA67 H ...

Page 59

... BLOCK SIZE TABLE (1) TC58FVM5T2A (top boot block) BLOCK SIZE BLOCK # BYTE MODE WORD MODE BA0~BA7 64 Kbytes 32 Kwords BA8~BA31 64 Kbytes 32 Kwords BA32~BA55 64 Kbytes 32 Kwords BA56~BA62 64 Kbytes 32 Kwords BA63~BA70 8 Kbytes 4 Kwords (2) TC58FVM5B2A (bottom boot block) BLOCK SIZE BLOCK # BYTE MODE WORD MODE BA0~BA7 ...

Page 60

PACKAGE DIMENSIONS TC58FVM5(T/B)(2/3)A(FT/XB)65 2003-01-29 60/63 Unit: mm ...

Page 61

PACKAGE DIMENSIONS TC58FVM5(T/B)(2/3)A(FT/XB)65 2003-01-29 61/63 Unit: mm ...

Page 62

Revision History Date Version 2002- 06-20 1.00 Original version 2002- 07-31 1.01 Added V 2002- 08-06 1.02 Added I 2002- 08-26 1.03 Added DC Typical Value. Added FBGA package. 2002- 09-10 1.04 Added Ordering information. 2002-10-24 1.05 Generalize Added the ...

Page 63

RESTRICTIONS ON PRODUCT USE x TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...

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